磁控濺射法低溫制備Al膜工藝參數(shù)的優(yōu)化
發(fā)布時間:2018-03-31 12:19
本文選題:磁控濺射 切入點(diǎn):鋁膜 出處:《微納電子技術(shù)》2017年12期
【摘要】:以高純度鋁作為濺射靶材,高純度氬氣作為濺射氣體,在低溫環(huán)境下利用直流磁控濺射設(shè)備在硅襯底上成功制備了鋁膜。通過單一因素控制法研究了濺射功率、腔室壓強(qiáng)和基片轉(zhuǎn)速三個關(guān)鍵因素對鋁膜的均勻性、致密性和附著性的影響。采用臺階儀、掃描電子顯微鏡(SEM)等測試設(shè)備以及磷酸腐蝕速率法、膠帶法等測試方法對鋁膜質(zhì)量進(jìn)行了表征與分析,得出了不同工藝參數(shù)與鋁膜的均勻性、致密性和附著性的關(guān)系,并且對結(jié)果進(jìn)行了優(yōu)化。實(shí)驗(yàn)結(jié)果表明:濺射功率和腔室壓強(qiáng)影響鋁膜的均勻性、致密性和附著性;基片轉(zhuǎn)速影響鋁膜的均勻性和附著性,并得到了各因素對鋁膜質(zhì)量的影響趨勢及影響機(jī)理。最終得到制備鋁膜的最優(yōu)工藝參數(shù)為濺射功率300 W、腔室壓強(qiáng)3.7×10-3 Torr(1 Torr=133.3 Pa)、基片轉(zhuǎn)速6 r/min。
[Abstract]:Aluminum films were successfully prepared on silicon substrates by DC magnetron sputtering under low temperature using high purity aluminum as target material and argon gas as sputtering gas. Sputtering power was studied by single factor control method. The influence of three key factors of chamber pressure and substrate speed on the uniformity, compactness and adhesion of aluminum film was investigated by means of step tester, scanning electron microscope (SEM) and phosphoric acid corrosion rate method. The quality of aluminum film was characterized and analyzed by tape method, and the relationship between different technological parameters and uniformity, compactness and adhesion of aluminum film was obtained. The experimental results show that sputtering power and chamber pressure affect the uniformity, compactness and adhesion of aluminum film, and the rotational speed of substrate affects the uniformity and adhesion of aluminum film. The influence trend and mechanism of various factors on the quality of aluminum film were obtained. Finally, the optimum technological parameters were obtained as follows: sputtering power 300W, chamber pressure 3.7 脳 10-3 Torr(1 Torr=133.3 Paan, substrate speed 6 r / min.
【作者單位】: 中北大學(xué)儀器科學(xué)與動態(tài)測試教育部重點(diǎn)實(shí)驗(yàn)室;中北大學(xué)電子測試技術(shù)重點(diǎn)實(shí)驗(yàn)室;北方自動控制技術(shù)研究所;
【基金】:國家杰出青年科學(xué)基金資助項(xiàng)目(51425505)
【分類號】:TB383.2;TG146.21
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