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金屬氧化物半導(dǎo)體微納結(jié)構(gòu)制備及其氣敏特性研究

發(fā)布時間:2018-03-27 04:54

  本文選題:納米材料 切入點(diǎn):金屬氧化物半導(dǎo)體 出處:《吉林大學(xué)》2015年博士論文


【摘要】:近年來,高性能的氣體傳感器在環(huán)境檢測、工業(yè)生產(chǎn)以及疾病診斷等方面扮演了非常重要的角色;诮饘傺趸锇雽(dǎo)體的氣體傳感器因其較低的成本和優(yōu)異的氣敏特性成為氣體傳感器領(lǐng)域的研究熱點(diǎn)。對于金屬氧化物半導(dǎo)體氣體傳感器,優(yōu)異的敏感材料是制作高性能氣體傳感器的基石。為了有效地檢測有毒有害或易燃易爆的氣體,研究人員制備了多種新穎獨(dú)特的敏感材料,而開發(fā)簡單、環(huán)保、低成本的合成方法一直是巨大的挑戰(zhàn)。本論文以制作高性能氣體傳感器為目標(biāo),利用幾種簡便易操作的方法合成出多種具有獨(dú)特形貌和優(yōu)異氣敏特性的氧化物半導(dǎo)體納米材料。對所制備的氧化物半導(dǎo)體納米材料進(jìn)行表面修飾和成分調(diào)控來增強(qiáng)選擇性、提高靈敏度以及響應(yīng)恢復(fù)速度等。主要成果包括: (1)通過退火處理室溫合成的In2S3制備出大小為10-40nm的In2O3納米顆粒,納米顆粒呈現(xiàn)輕微的團(tuán)聚,室溫光致發(fā)光光譜證明納米顆粒中存在很多氧空位。大量氧空位以及較小顆粒尺寸使得In2O3納米顆粒傳感器擁有良好的丙酮?dú)饷粜阅。為了避免納米顆粒的團(tuán)聚問題,合成出厚度約為10nm的表面粗糙的ZnO納米片。薄且表面粗糙的形貌使得ZnO納米片氣體傳感器對乙醇表現(xiàn)出好的選擇性,高的靈敏度以及快的響應(yīng)/恢復(fù)速度。 (2)將貴金屬修飾到氧化物半導(dǎo)體表面構(gòu)建的貴金屬-氧化物半導(dǎo)體等級結(jié)構(gòu),可增強(qiáng)敏感材料的表面活性,促進(jìn)表面氣體反應(yīng),進(jìn)而提高靈敏度和選擇性。因此,,利用兩步易操作方法合成葵花狀A(yù)g-In2O3等級納米結(jié)構(gòu),并研究不同的Ag修飾量對氣敏性能的影響。氣敏測試表明適量Ag修飾In2O3等級結(jié)構(gòu)擁有更好的選擇性以及更高的靈敏度,過多Ag修飾卻降低了氣敏性能。Ag-In2O3所表現(xiàn)的優(yōu)異甲醛氣敏特性歸因于新穎的表面粗糙的葵花狀等級結(jié)構(gòu)和恰當(dāng)修飾量的Ag納米顆粒所引入的化學(xué)和電子作用。 (3)設(shè)計、制備氧化物半導(dǎo)體-氧化物半導(dǎo)體型等級異質(zhì)結(jié)構(gòu)敏感材料,并應(yīng)用于氣體傳感器,利用不同組分間的協(xié)同增感效應(yīng)提升傳感器的氣敏特性。分別構(gòu)筑了In2O3和Pd0.5Pd3O4納米顆粒修飾的花狀ZnO等級異質(zhì)結(jié)構(gòu)In2O3-ZnO和Pd0.5Pd3O4-ZnO。形貌和成分表征證明In2O3或Pd0.5Pd3O4納米顆粒均勻地分散沉積在ZnO等級結(jié)構(gòu)的表面。所合成的In2O3-ZnO等級異質(zhì)結(jié)構(gòu)氣體傳感器展示了增強(qiáng)的甲醛氣敏特性,Pd0.5Pd3O4-ZnO等級異質(zhì)結(jié)構(gòu)傳感器展現(xiàn)了優(yōu)異的甲醇?xì)饷籼匦。同時研究了納米顆粒的修飾量對氣敏性能的影響。獨(dú)特的三維等級結(jié)構(gòu)、恰當(dāng)?shù)募{米顆粒修飾量以及納米顆粒與等級結(jié)構(gòu)界面處的額外電子耗盡層使得等級異質(zhì)結(jié)構(gòu)展現(xiàn)優(yōu)異的氣敏特性。
[Abstract]:In recent years, high performance gas sensors have been detected in the environment. Industrial production and disease diagnosis play a very important role in gas sensors based on metal oxide semiconductor because of its low cost and excellent gas sensing characteristics become a hot spot in the field of gas sensors. For metal oxide semiconductor gas sensors, Excellent sensitive materials are the cornerstone of making high performance gas sensors. In order to effectively detect toxic, harmful or flammable and explosive gases, researchers have prepared a variety of novel and unique sensitive materials that are simple to develop and environmentally friendly. Low-cost synthesis methods have been a huge challenge. A variety of oxide semiconductor nanomaterials with unique morphology and excellent gas sensing properties were synthesized by using several simple and easy to operate methods. Surface modification and composition control of the prepared oxide semiconductor nanomaterials were carried out to enhance the selectivity. Improve sensitivity and response recovery speed etc. The main achievements include:. (1) In2O3 nanoparticles of 10-40nm size were prepared by annealed In2S3 synthesized at room temperature, and the nanoparticles showed slight agglomeration. Room temperature photoluminescence spectra show that there are many oxygen vacancies in the nanoparticles. A large number of oxygen vacancies and small particle size make the In2O3 nanoparticles sensor have good acetone gas sensitivity. ZnO nanocrystals with a thickness of about 10nm were synthesized, and the thin and rough surface made ZnO gas sensors exhibit good selectivity for ethanol, high sensitivity and fast response / recovery speed. (2) the noble metal modified to the surface of oxide semiconductors can enhance the surface activity of sensitive materials, promote the surface gas reaction, and then improve the sensitivity and selectivity. The sunflower Ag-In2O3 grade nanostructures were synthesized by two-step easy to operate method, and the effects of different Ag modifiers on the gas sensing properties were studied. The gas sensitivity test showed that the appropriate amount of Ag modified Ag-In2O3 grade structures had better selectivity and higher sensitivity. The excellent formaldehyde gas sensitivity of Ag-In2O3 is due to the novel sunflower grade structure with rough surface and the chemical and electronic effects introduced by the appropriately modified Ag nanoparticles. Design and manufacture of oxide semiconductor-oxide semiconductor type heterostructure sensitive materials, and their applications in gas sensors, Using the synergistic sensitization effect between different components to enhance the gas sensing characteristics of the sensor, the In2O3 and Pd0.5Pd3O4 nano-particles modified In2O3-ZnO and PD0.5Pd3O4-ZnO were constructed, respectively. The morphology and composition characterization showed that the In2O3 or Pd0.5Pd3O4 nanoparticles were homogeneous. The synthesized In2O3-ZnO grade heterostructure gas sensors exhibit enhanced formaldehyde gas sensing characteristics. Pd0.5Pd3O4-ZnO grade heterostructure sensors exhibit excellent methanol gas sensing properties. The effect of the modified amount of nanoparticles on the gas sensing performance was studied. The proper amount of nanoparticles modification and the additional electron depletion layer at the interface between the nanoparticles and the graded structure make the graded heterostructures exhibit excellent gas-sensing properties.
【學(xué)位授予單位】:吉林大學(xué)
【學(xué)位級別】:博士
【學(xué)位授予年份】:2015
【分類號】:TB383.1

【共引文獻(xiàn)】

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2 M.Mousavi;A.Kompany;N.Shahtahmasebi;M.M.Bagheri-Mohagheghi;;The effect of solution concentration on the physical and electrochemical properties of vanadium oxide films deposited by spray pyrolysis[J];Journal of Semiconductors;2013年10期

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6 雷曼;范新會;于靈敏;陳建;韋建松;嚴(yán)文;;物理熱蒸發(fā)法制備Ga摻雜ZnO納米材料的研究[J];材料保護(hù);2013年S2期

7 余華梁;陳曦w

本文編號:1670041


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