含D-A結(jié)構(gòu)及窄帶隙聚噻吩衍生物復(fù)合熱電材料的制備與熱電性能研究
發(fā)布時(shí)間:2018-03-23 01:23
本文選題:聚3 切入點(diǎn):4-乙撐二氧噻吩甲烯衍生物 出處:《深圳大學(xué)》2015年碩士論文 論文類型:學(xué)位論文
【摘要】:熱電材料可以利用廢棄的熱量以及極小的溫差進(jìn)行發(fā)電或者制冷,而且不含有任何轉(zhuǎn)動(dòng)部位和有毒工作液體,因此被廣泛關(guān)注。高分子熱電材料在最近幾年成為研究熱點(diǎn),主要原因在于它們具有資源豐富,價(jià)格低廉,易合成,易成型加工,且熱導(dǎo)率低等突出優(yōu)點(diǎn)。本論文合成了一系列聚噻吩衍生物用作熱電材料,包括含電子施受一體結(jié)構(gòu)(donor-acceptor,簡(jiǎn)稱D-A結(jié)構(gòu))的聚席夫堿(PSB噻吩衍生物),帶有不同側(cè)鏈的窄帶隙聚3,4-乙撐二氧噻吩甲烯衍生物。這些聚合物進(jìn)一步與無(wú)機(jī)材料復(fù)合,制備了有機(jī)/無(wú)機(jī)復(fù)合熱電材料。研究了高分子的結(jié)構(gòu)(如D-A結(jié)構(gòu),側(cè)鏈種類)對(duì)復(fù)合材料熱電性能的影響。具體內(nèi)容如下:1、合成了一種含有D-A結(jié)構(gòu)的聚席夫堿PSB(A),并制備了相關(guān)的有機(jī)-無(wú)機(jī)復(fù)合材料。為了對(duì)比,同時(shí)合成了普通結(jié)構(gòu)的聚席夫堿PSB(B)。在同一摻雜度時(shí),PSB(A)/G(石墨)復(fù)合材料的功率因子最高為10.2μWm-1K-2,而PSB(B)/G復(fù)合材料的功率因子僅為4.5μWm-1K-2。研究表明:合成特殊結(jié)構(gòu)(如D-A結(jié)構(gòu))的聚合物,并與無(wú)機(jī)材料復(fù)合,將有望得到高性能的高分子復(fù)合熱電材料。進(jìn)一步研究了不同的無(wú)機(jī)粒子對(duì)PSB(A)相關(guān)的復(fù)合材料的熱電性能的影響,發(fā)現(xiàn)PSB(A)/80%G樣品的ZT值(2.53×10-3)最高。2、合成了一系列含有不同側(cè)鏈的聚3,4-乙撐二氧噻吩甲烯衍生物(PEDOT-M)。用紅外和核磁對(duì)合成的PEDOT-M進(jìn)行了表征。同時(shí)測(cè)試了PEDOT-M本征態(tài)的Seebeck系數(shù)以及紫外可見光光譜,發(fā)現(xiàn)PEDOT-M都是窄帶隙的聚合物,而擁有強(qiáng)吸電子和供電子側(cè)鏈的PEDOT-M表現(xiàn)出了更高的Seebeck系數(shù)以及更窄的帶隙。3、通過機(jī)械球磨和冷壓成型制備了PEDOT-M復(fù)合材料,對(duì)復(fù)合材料進(jìn)行了SEM,TGA,FTIR,XRD,Raman等表征。研究了不同種類的側(cè)鏈對(duì)PEDOT-M相關(guān)復(fù)合材料的熱電性能的影響。PEDOT-M/80%G復(fù)合材料在120°C時(shí),ZT值最高為6.75×10-3,而PEDOT-M/80%MWNT(多壁碳納米管)復(fù)合材料在120°C時(shí),ZT值最高為9.5×10-4。
[Abstract]:Thermoelectric materials can be generated or cooled by waste heat and minimal temperature difference, and they do not contain any rotating parts or toxic working liquids, so they are widely concerned. Polymer thermoelectric materials have become a hot research topic in recent years. In this paper, a series of polythiophene derivatives have been synthesized as thermoelectric materials, because they are rich in resources, cheap in price, easy to synthesize, easy to form and processed, and have low thermal conductivity. Including poly (Schiff base) PSB thiophene derivatives with electron acceptor structure (D-A), narrow band gaps with different side chains, poly (3o 4- ethylenedioxythiophene) derivatives. These polymers are further compounded with inorganic materials, Organic / inorganic composite thermoelectric materials were prepared. The structure of polymer (such as D-A structure) was studied. Effect of side chain type) on the thermoelectric properties of composites. The main contents are as follows: 1. A kind of poly (Schiff base) PSB-An containing D-A structure was synthesized and related organic-inorganic composites were prepared. At the same time, the common structure of PSB-Schiff base PSB-BX was synthesized. At the same doping degree, the highest power factor of PSBA- / G- (graphite) composite was 10.2 渭 Wm-1K-2, while the power factor of PSB(B)/G composite was only 4.5 渭 Wm-1K-2.The results showed that the polymer with special structure (such as D-A structure) was synthesized. Furthermore, the influence of different inorganic particles on the thermoelectric properties of PSB-Arelated composites was studied. It was found that the ZT value of PSB(A)/80%G samples was 2.53 脳 10-3) the highest. 2. A series of poly (3h4- ethylenedioxythiophene) derivatives containing different side chains were synthesized. The synthesized PEDOT-M was characterized by IR and NMR. The Seebeck coefficients of the intrinsic states of PEDOT-M were also measured. And UV-Vis spectra, It was found that PEDOT-M were narrow band gap polymers, while PEDOT-M with strong electron absorption and donor side chains showed higher Seebeck coefficient and narrower band gap. PEDOT-M composites were prepared by mechanical milling and cold pressing. The effects of different side chains on the thermoelectric properties of PEDOT-M related composites were investigated. The maximum value of ZT was 6.75 脳 10 ~ (-3) at 120 擄C for PEDOT-M / 80 G composites, and 9.5 脳 10 ~ (-4) for PEDOT-M / 80 MWNTs at 120 擄C.
【學(xué)位授予單位】:深圳大學(xué)
【學(xué)位級(jí)別】:碩士
【學(xué)位授予年份】:2015
【分類號(hào)】:TB34
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