本文選題：有機(jī)薄膜場效應(yīng)晶體管　切入點(diǎn)：并五苯薄膜　出處：《東北師范大學(xué)》2017年碩士論文　論文類型：學(xué)位論文

【摘要】：近幾十年來,關(guān)于并五苯有機(jī)薄膜場效應(yīng)晶體管的研究已經(jīng)非常廣泛。由于其有較高的遷移率、可以大面積制備、能與柔性襯底兼容等優(yōu)點(diǎn),常被應(yīng)用在價格低廉、大規(guī)模的柔性電子產(chǎn)品當(dāng)中。然而為了促進(jìn)其在柔性方面的發(fā)展,常用具有柔性、彈性的有機(jī)聚合物絕緣層代替無機(jī)絕緣層。其中聚二甲基硅氧烷(PDMS)是最常見的硅基聚合物材料,由于其有生物兼容性、絕緣特性、光學(xué)透明、彈性等優(yōu)點(diǎn),常作為襯底、封裝層和彈性印章等。然而,由于無法在PDMS表面真空蒸鍍獲得有機(jī)薄膜,因此其很少被應(yīng)用在薄膜場效應(yīng)晶體管中。目前也沒有文獻(xiàn)報(bào)道如何在PDMS表面獲得有機(jī)薄膜,更無法基于PDMS絕緣層直接構(gòu)筑柔性薄膜晶體管。針對以上的問題,我們對PDMS表面進(jìn)行修飾,獲得致密的并五苯薄膜。其次基于此方法構(gòu)筑三種器件結(jié)構(gòu)的柔性并五苯薄膜晶體管,并探究彎曲對器件性能的影響。主要工作如下:1、研究了并五苯薄膜的制備過程中沉積溫度、原料純度對器件性能的影響以及其在空氣中的不穩(wěn)定性。發(fā)現(xiàn)用提純后的并五苯材料,保持50℃沉積溫度可以獲得更好的并五苯薄膜。同時發(fā)現(xiàn)當(dāng)并五苯薄膜場效應(yīng)晶體管暴露在空氣中,器件性能有明顯下降。2、本次實(shí)驗(yàn)選擇柔彈性優(yōu)異的PDMS作為器件的絕緣層,并且針對不能在PDMS表面真空蒸鍍有機(jī)薄膜的問題,設(shè)計(jì)了一種全干修飾的方法。通過優(yōu)化全干修飾中氧等離子體處理和氣相OTS修飾兩個必不可少的過程,得到當(dāng)氧等離子處理時間為100 s,OTS修飾時間為7 h時器件遷移率為0.65 cm2V 1s 1。3、構(gòu)筑了基于PDMS絕緣層的柔性并五苯有機(jī)薄膜晶體管,其中包括三種器件結(jié)構(gòu)。對器件進(jìn)行多次彎曲后,仍可獲得場效應(yīng)性能。其中構(gòu)筑的可貼合器件結(jié)構(gòu)可以隨三維曲面襯底形狀的改變而變化。這樣的器件結(jié)構(gòu)對大規(guī)模、可穿戴電子器件的發(fā)展提供了可能。
[Abstract]:In recent decades, the field effect transistors of pentaben organic thin films have been widely studied. Due to their high mobility, large area preparation, compatibility with flexible substrates and so on, they are often used in low cost. In large scale flexible electronic products, however, in order to promote the development of flexibility, it is commonly used with flexibility. Polydimethylsiloxane (PDMS) is the most common silicon-based polymer material, which is often used as a substrate because of its advantages of biological compatibility, insulation, optical transparency, elasticity and so on. However, organic films are rarely used in thin film field effect transistors (FET) because they can not be deposited on PDMS surface by vacuum evaporation. There is no literature on how to obtain organic thin films on PDMS surface. We can't build flexible thin film transistors directly based on PDMS insulator. In view of the above problems, we modify the surface of PDMS. Dense pentabenzene thin films were obtained. Secondly, flexible pentabenzene thin film transistors with three kinds of device structures were constructed based on this method. The main work is as follows: 1. The deposition temperature during the preparation of penta-benzene thin films was studied. Effects of Purity of Raw Materials on the Properties of Devices and their instability in Air. A better pentabenzene film can be obtained by keeping the deposition temperature at 50 鈩，

本文編號：1609651