本文選題：深紫外照射　切入點(diǎn)：室溫　出處：《華中科技大學(xué)》2015年碩士論文　論文類型：學(xué)位論文

【摘要】：電阻式存儲(chǔ)器(ReRAM)憑借其與CMOS工藝很好的兼容性、超快的擦寫速度、極低的功耗、結(jié)構(gòu)簡(jiǎn)單、可高密度集成等優(yōu)點(diǎn),近幾年成為下一代非揮發(fā)性存儲(chǔ)器的研究重點(diǎn)。最近柔性電子器件因其獨(dú)特的柔性,延展性以及可折疊,低成本制造工藝等優(yōu)點(diǎn)而受到廣泛的關(guān)注,越來越多關(guān)于ReRAM的研究開始關(guān)注在低溫下進(jìn)行制備。因此本論文用室溫下深紫外固化的方法取代溶膠凝膠方法中的高溫退火制備了氧化鋅薄膜,XRD分析結(jié)果表明薄膜為非晶的,XPS分析結(jié)果表明薄膜的主要成分是ZnO。在深紫外固化后的薄膜表面濺射Al作為頂電極獲得Al/a-ZnO/FTO結(jié)構(gòu)的器件,研究深紫外照射時(shí)間對(duì)器件電阻轉(zhuǎn)變性能的影響,進(jìn)一步解釋了深紫外固化的機(jī)制。研究表明經(jīng)過充足時(shí)間(12 h)照射的器件表現(xiàn)出雙極性電阻開關(guān)特性,閾值電壓分布集中(-3.7 VVset-2.9 V,3.4 VVreset4.3 V)且符合低電壓工作的要求,至少在4000s內(nèi)器件的高低阻態(tài)都沒有沒有發(fā)生明顯的退化,表現(xiàn)出了良好的存儲(chǔ)器特性。Al/a-ZnO/FTO器件的這種電阻轉(zhuǎn)變特性可以用空間電荷限制電流傳導(dǎo)機(jī)制解釋。最后在上述研究的基礎(chǔ)上用柔性的ITO/PET襯底取代FTO/玻璃襯底,并用不易氧化的Ag取代了易被氧化的Al作為頂電極在室溫下采用同樣的深紫外固化的方法制備得到了柔性的Ag/a-ZnO/ITO結(jié)構(gòu)的柔性器件,并探究了Al和Ag這兩種不同的金屬材料作為上電極時(shí)整個(gè)阻變存儲(chǔ)器件的電荷傳輸機(jī)制的不同,Ag/a-ZnO/ITO結(jié)構(gòu)在高阻態(tài)的電荷傳輸符合Frenkel-Poole發(fā)射類型,在低阻態(tài)符合歐姆傳導(dǎo)定律。最后對(duì)器件的機(jī)械柔韌性,電阻開關(guān)特性進(jìn)行了研究。
[Abstract]:Resistive memory (RRAM) has the advantages of good compatibility with CMOS process, super fast writing speed, extremely low power consumption, simple structure, high density integration, etc. In recent years, flexible electronic devices have attracted wide attention due to their unique flexibility, ductility, foldable and low-cost manufacturing processes. More and more researches on ReRAM have focused on the preparation at low temperature. Therefore, in this thesis, ZnO thin films were prepared by deep ultraviolet curing at room temperature instead of high temperature annealing in sol-gel method. The results of X-ray photoelectron spectroscopy (XPS) show that the main component of the films is ZnO.The deposited Al on the surface of the films after deep UV curing is used as the top electrode to obtain the Al/a-ZnO/FTO structure. The effect of external irradiation time of deep violet on the resistance transition performance of the device is studied, and the mechanism of deep ultraviolet curing is explained. The results show that the device irradiated with deep violet for 12 h) exhibits the characteristics of bipolar resistance switch. The threshold voltage distribution is concentrated at -3.7 VVset-2.9 V ~ (3. 4) V) and meets the requirements of low voltage operation. At least in 4000 s, there is no obvious degradation of the high and low resistance state of the device. The resistance transition characteristics of Alra-ZnO / FTO devices can be explained by the space-charge-limited current conduction mechanism. Finally, the flexible ITO/PET substrates are used to replace the FTO/ glass substrates. The flexible devices with flexible Ag/a-ZnO/ITO structure were prepared by the same deep ultraviolet curing method at room temperature using the non-oxidized Ag instead of the easily oxidized Al as the top electrode at room temperature. The different charge transport mechanisms of the whole resistive memory device with Al and Ag as the upper electrode are investigated. The charge transfer in the high resistance states of Al / Ag / ZnO / ITO / ITO structure accords with the type of Frenkel-Poole emission. In the low resistance state, the ohmic conduction law is obeyed. Finally, the mechanical flexibility and resistance switch characteristics of the device are studied.
【學(xué)位授予單位】：華中科技大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TB383.2;TP333

【參考文獻(xiàn)】

相關(guān)期刊論文 前7條

1 劉新軍;李效民;王群;楊蕊;曹遜;陳立東;;Ti/La_(0.7)Ca_(0.3)MnO_3/Pt結(jié)構(gòu)器件中“負(fù)”電阻開關(guān)特性研究[J];無機(jī)材料學(xué)報(bào);2010年02期

2 吳曉薇;郭子政;;磁阻隨機(jī)存取存儲(chǔ)器(MRAM)的原理與研究進(jìn)展[J];信息記錄材料;2009年02期

3 曹遜;李效民;于偉東;張亦文;;PLD法制備TiO_2薄膜及電阻轉(zhuǎn)變特性研究[J];無機(jī)材料學(xué)報(bào);2009年01期

4 劉波,宋志棠,封松林;相變型半導(dǎo)體存儲(chǔ)器研究進(jìn)展[J];物理;2005年04期

5 孫曉丹,馮華君,包建文;輻射固化復(fù)合材料進(jìn)展[J];工程塑料應(yīng)用;2002年10期

6 潘立陽,朱鈞;Flash存儲(chǔ)器技術(shù)與發(fā)展[J];微電子學(xué);2002年01期

7 姜興華;半導(dǎo)體集成電路存儲(chǔ)器發(fā)展綜述[J];河北師范大學(xué)學(xué)報(bào);1999年01期

相關(guān)碩士學(xué)位論文 前1條

1 馬建;紫外光快速固化環(huán)氧樹脂及其復(fù)合材料研究[D];武漢理工大學(xué);2009年

，

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