本文選題：薄膜　切入點(diǎn)：濺射　出處：《天津理工大學(xué)》2015年碩士論文　論文類型：學(xué)位論文

【摘要】：非均勻磁性半導(dǎo)體薄膜是一種同時(shí)具備半導(dǎo)體性質(zhì)和磁性質(zhì)的薄膜材料,是最有可能實(shí)現(xiàn)自旋電子器件實(shí)際應(yīng)用的材料之一。這類薄膜主要通過(guò)向半導(dǎo)體中摻雜磁性離子來(lái)制備。人們先后在磁性金屬 非磁性金屬多層膜系統(tǒng)、磁性金屬 絕緣體顆粒系統(tǒng)以及磁性隧道結(jié)中發(fā)現(xiàn)了室溫下的磁電阻效應(yīng)(GMR),并努力將這種非本征的電子輸運(yùn)特性應(yīng)用到電子學(xué)器件中。GMR效應(yīng)來(lái)源于電子的自旋相關(guān)散射或自旋相關(guān)的隧道效應(yīng),即與兩個(gè)相鄰磁性單元的磁化強(qiáng)度的相對(duì)取向以及傳導(dǎo)或隧道電子的自旋極化率有關(guān)。因此,近年來(lái),非均勻磁性體系的磁性、結(jié)構(gòu)及自旋相關(guān)的電子輸運(yùn)特性的研究是電子材料和器件領(lǐng)域最為活躍的研究課題之一。本論文中采用磁控濺射的方法制備了非均勻的FexTi1-xOδ磁性半導(dǎo)體薄膜,并對(duì)制備的FexTi1-xOδ系列薄膜的微結(jié)構(gòu)、磁性質(zhì)及電輸運(yùn)性質(zhì)進(jìn)行了詳細(xì)的表征和分析。研究表明所制備的薄膜是非結(jié)晶態(tài)的,且薄膜內(nèi)各種元素的分布是不均勻的。所有的樣品在低溫時(shí)都具有明顯的鐵磁性特征;溫度為5 K時(shí),樣品的矯頑力超過(guò)600 Oe,磁化強(qiáng)度的最大值超過(guò)1000 emu/cm3;室溫時(shí),樣品的矯頑力與剩磁都減小為0,磁化強(qiáng)度的最大值減少為410 emu/cm3。對(duì)樣品的電輸運(yùn)性質(zhì)研究表明:所制備薄膜的電輸運(yùn)特性為可變程躍遷導(dǎo)電機(jī)制,溫度為3 K時(shí),樣品中最大的負(fù)磁電阻值為32%;室溫下,磁電阻仍為8%,并且為負(fù)值。低溫時(shí)的負(fù)磁電阻效應(yīng)是由薄膜的無(wú)序磁矩的反鐵磁性造成的。
[Abstract]:Nonuniform magnetic semiconductor film is a kind of thin film material with both semiconductor and magnetic properties. It is one of the most promising materials for the practical applications of spin electronic devices. These thin films are prepared mainly by doping magnetic ions into semiconductors. The magnetoresistance effect at room temperature has been found in the magnetic metal insulator particle system and magnetic tunnel junctions. The application of this non-intrinsic electron transport characteristic to the electronic devices. GMR effect originates from the spin of electrons. Tunneling effects related to scattering or spin, That is, the relative orientation of magnetization of two adjacent magnetic units and the spin polarizability of conducting or tunneling electrons. Therefore, in recent years, the magnetic properties of inhomogeneous magnetic systems, The study of the structure and spin related electron transport characteristics is one of the most active research topics in the field of electronic materials and devices. In this thesis, the nonuniform FexTi1-xO 未 magnetic semiconductor thin films are prepared by magnetron sputtering. The microstructure, magnetic properties and electrical transport properties of the FexTi1-xO 未 series films are characterized and analyzed in detail. The results show that the films are amorphous. And the distribution of various elements in the film is not uniform. All the samples have obvious ferromagnetic characteristics at low temperature. At 5 K, the coercivity of the sample exceeds 600 OE, the maximum magnetization is more than 1000 emu / cm 3, and at room temperature, The coercivity and remanence of the samples are reduced to 0, and the maximum magnetization decreases to 410 emu / cm 3. The study of the electrical transport properties of the films shows that the electric transport characteristics of the films are variable range transition conduction mechanism, and the temperature is 3 K. The maximum negative magnetoresistance in the sample is 32 and the magnetoresistance is still 8 and negative at room temperature. The negative magnetoresistance effect at low temperature is caused by the antiferromagnetism of the disordered magnetic moment of the thin film.
【學(xué)位授予單位】：天津理工大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TN304;TB383.2

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本文編號(hào)：1601427