BTO薄膜的制備及其調(diào)制器應用的基礎研究
發(fā)布時間:2018-03-10 17:43
本文選題:BTO薄膜 切入點:電光調(diào)制 出處:《哈爾濱工業(yè)大學》2016年碩士論文 論文類型:學位論文
【摘要】:新一代光網(wǎng)絡信號處理需要高性能的波導調(diào)制器,高電光性能的波導材料是制作高性能調(diào)制器的前提。鈦酸鋇(BTO)薄膜材料具有優(yōu)良的電光特性、高度可集成性和優(yōu)異的襯底兼容性。隨著微電子加工技術的不斷發(fā)展,BTO薄膜材料在高速電光器件方面具有重要的應用前景。本論文對于BTO薄膜的制備表征、實驗測試和調(diào)制器結構設計進行了研究。在成功制備BTO薄膜的基礎上,通過調(diào)制器波導結構設計,從而實現(xiàn)對光信號的高速調(diào)制。采用溶膠-凝膠法制備BTO薄膜。探討旋涂BTO薄膜的層數(shù)對樣品厚度的影響,通過分析成膜情況優(yōu)化制備工藝。研究旋涂參數(shù)及烘干溫度對薄膜厚度和成膜質(zhì)量的影響,確定出最優(yōu)BTO薄膜質(zhì)量所對應的工藝參數(shù)。利用X射線衍射法分析了不同退火溫度對薄膜結晶性能的影響,得到最佳結晶溫度為700℃。推導了電光系數(shù)的測量公式,搭建測試系統(tǒng),利用簡單反射法對BTO薄膜電光系數(shù)進行了研究,得到532nm波長下電光系數(shù)為87.5pm/V。設計波導結構,利用激光直寫光刻技術研究了波導加工工藝,獲得了10μm的光刻分辨率,滿足了波導加工精度的要求。研究BTO薄膜脊形波導結構對于波導傳輸模式的影響。采用有效折射率法,對脊型波導單模傳輸進行模擬仿真,得到單模傳輸條件的波導結構參數(shù),優(yōu)化的BTO薄膜波導內(nèi)外脊高分別為600 nm和300 nm,脊寬小于1μm。設計Y分支型、定向耦合器型兩種不同分束器結構的馬赫-曾德爾電光調(diào)制器,研究彎曲波導曲率半徑、分束器長度等結構參數(shù)對于光信號傳輸?shù)挠绊?得出最佳結構參數(shù),為器件制作提供參考。
[Abstract]:The new generation optical network signal processing needs the high performance waveguide modulator, the high electro-optic waveguide material is the premise of making the high performance modulator, the barium titanate BTO-thin film material has the excellent electro-optic characteristic, the new generation optical network signal processing needs the high performance waveguide modulator. High integration and excellent substrate compatibility. With the development of microelectronic processing technology, BTO thin film material has an important application prospect in high-speed electro-optic devices. In this paper, the preparation of BTO thin films is characterized. Experimental test and modulator structure design are carried out. On the basis of successfully fabricating BTO thin films, the waveguide structure of modulator is designed. The BTO thin films were prepared by sol-gel method. The effect of the number of layers of spin-coated BTO films on the thickness of the samples was discussed. The effects of spin-coating parameters and drying temperature on film thickness and film quality were studied by analyzing the process of film formation. The effects of different annealing temperatures on the crystalline properties of BTO films were analyzed by X-ray diffraction method. The optimum crystallization temperature was obtained at 700 鈩,
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