本文選題：半導(dǎo)體氧化物　切入點：氧化鋅　出處：《安徽工程大學(xué)》2017年碩士論文　論文類型：學(xué)位論文

【摘要】：氧化鋅(ZnO)是禁帶寬度為(3.4 eV)的n型半導(dǎo)體材料,由于成本低、化學(xué)性能穩(wěn)定等,其大規(guī)模應(yīng)用在氣敏傳感器、光電器件、光催化等領(lǐng)域。半導(dǎo)體氣敏傳感器由于具有壽命長、應(yīng)用范圍廣、成本低、能耗低和制作簡單等特點,已被廣泛應(yīng)用于易爆易燃、有害有毒氣體的檢測,是目前應(yīng)用最廣的氣敏傳感器之一。但是當前的ZnO氣敏傳感器仍然存在靈敏度較低、工作溫度高、選擇性差、重復(fù)性差等缺陷,這大大限制了其在國民經(jīng)濟建設(shè)中的應(yīng)用。本課題針對以上的缺陷,合成了三維的多孔單晶ZnO納米片,研究了金納米顆粒(Au NPs)修飾對其氣敏性能的影響;制成了紫外光激活的單片ZnO氣敏傳感器,探究了其性能。主要內(nèi)容如下:(1)采用一步水熱法結(jié)合熱處理工藝合成多孔單晶ZnO納米片(HPSCZNs),聚乙烯亞胺(PEI)修飾在HPSCZNs表面,把PEI修飾的HPSCZNs與AuNPs溶膠溶液混合,AuNPs經(jīng)過靜電吸引修飾到HPSCZNs表面,制成了 AuNPs修飾的HPSCZNs。通過表征證實了材料的多孔單晶片體結(jié)構(gòu)以及AuNPs的修飾。探究了材料的形成機理,工作溫度和不同金含量對傳感器性能的影響。同時檢測了傳感器對三甲胺(TMA)的氣敏性能,最后對氣敏機理做了較深入的探討。(2)文獻報道多晶結(jié)構(gòu)會致使氣敏傳感器穩(wěn)定性變差,氣敏傳感器多是較高的工作溫度。本文把多孔單晶ZnO納米片材料在乙醇中超聲分散,滴加到Au叉指電極上,用聚焦離子束雙束系統(tǒng)(FIB)在ZnO與金電極之間沉積鉑(Pt)層連通電極,制成了單片ZnO氣敏傳感器,探究了其對乙醇的氣敏特性。后對紫外激活傳感器的敏感機理做了深入討論。
[Abstract]:Zinc oxide (ZnO) is an n-type semiconductor material with a bandgap of 3.4eV). Because of its low cost and stable chemical properties, it is widely used in gas sensors, optoelectronic devices, photocatalysis and other fields. It has been widely used in the detection of flammable, flammable and noxious gases due to its wide range of applications, low cost, low energy consumption and simple fabrication. It is one of the most widely used gas sensors at present. However, the current ZnO gas sensors still have some shortcomings, such as low sensitivity, high working temperature, poor selectivity, poor repeatability, etc. This has greatly limited its application in national economic construction. In view of the above defects, the three-dimensional porous single crystal ZnO nanocrystals were synthesized, and the effect of au / au modification on their gas-sensing properties was studied. A monolithic ZnO gas sensor activated by ultraviolet light was fabricated and its properties were investigated. The main contents are as follows: 1) the porous ZnO nanocrystalline ZnO films were synthesized by one step hydrothermal method combined with heat treatment, and modified on the surface of HPSCZNs. HPSCZNs modified by PEI was mixed with AuNPs sol solution and modified to HPSCZNs surface by electrostatic attraction. HPSCZNs modified by AuNPs were prepared. The structure of porous single crystal chips and the modification of AuNPs were confirmed by characterization. The formation mechanism of the material was investigated. The effects of working temperature and different gold content on the performance of the sensor were also studied. At the same time, the gas sensing performance of the sensor to trimethylamine (TMA) was tested. Finally, the gas sensing mechanism was discussed in depth, and it was reported in the literature that the polycrystalline structure would result in the deterioration of the stability of the gas sensor. In this paper, the porous monocrystalline ZnO nanocrystalline materials were dispersed in ethanol and dripped onto the au interDigital electrode, and the Pt-connected electrode was deposited between the ZnO and the gold electrode by focusing ion beam double beam system. A single ZnO gas sensor was fabricated and its gas sensitivity to ethanol was investigated. The sensitive mechanism of UV activated sensor was discussed in detail.
【學(xué)位授予單位】：安徽工程大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2017
【分類號】：TB383.1;TP212

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