本文選題：直流射頻耦合磁控濺射　切入點(diǎn)：AZO薄膜　出處：《稀有金屬材料與工程》2017年03期 　論文類型：期刊論文

【摘要】：采用直流射頻耦合磁控濺射技術(shù),以氧化鋅摻鋁(AZO,2%Al_2O_3,質(zhì)量分?jǐn)?shù))陶瓷靶為靶材,在玻璃基片上低溫沉積AZO薄膜,并采用質(zhì)量分?jǐn)?shù)為0.5%的HCl溶液刻蝕制備絨面AZO薄膜,通過XRD、SEM、分光光度計、霍爾效應(yīng)測試系統(tǒng)、光電霧度儀等設(shè)備重點(diǎn)研究工作壓強(qiáng)對直流射頻耦合磁控濺射制備AZO薄膜的晶相結(jié)構(gòu)、表面形貌、光電性能以及后期制絨的影響。研究表明,直流射頻耦合磁控濺射可以在低溫下制備性能優(yōu)異的AZO薄膜,且隨著工作壓強(qiáng)的減小,致密性增強(qiáng),光電性能改善,后期刻蝕得到具有良好陷光作用的絨面結(jié)構(gòu)。在工作壓強(qiáng)0.5 Pa下,低溫制備的AZO薄膜電阻率達(dá)到3.55×10~(-4)Ω·cm,薄膜可見光透過達(dá)到88.36%,刻蝕后電阻率為4.19×10~(-4)Ω·cm,可見光透過率89.59%,霧度達(dá)24.7%。
[Abstract]:AZO thin films were deposited on glass substrates by DC RF coupled magnetron sputtering technique, and AZO thin films were deposited on glass substrates with aluminum doped AZO _ 2Al _ 2O _ 3 ceramic target as the target, and HCl solution with mass fraction of 0.5% was used to etch the AZO thin films on the suede. The crystal structure and surface morphology of AZO thin films prepared by DC RF coupled magnetron sputtering under working pressure were studied by means of XRDX SEM, spectrophotometer, Hall effect test system and optoelectronic haze meter. The results show that AZO thin films with excellent properties can be prepared by DC RF coupled magnetron sputtering at low temperature. With the decrease of working pressure, the density increases and the optoelectronic properties are improved. At the working pressure of 0.5 Pa, the resistivity of AZO films prepared at low temperature is 3.55 脳 10 ~ (-4) 惟 路cm, the visible light transmittance is 88.36, the resistivity is 4.19 脳 10 ~ (-4) 惟 路cm, the transmittance of visible light is 89.59, and the fog degree is 24.7B.
【作者單位】： 浮法玻璃新技術(shù)國家重點(diǎn)實(shí)驗(yàn)室;蚌埠玻璃工業(yè)設(shè)計研究院;
【基金】：中國建筑材料集團(tuán)有限公司集團(tuán)經(jīng)費(fèi)(K12364)
【分類號】：TB383.2

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