本文關鍵詞： AMR 表面粗糙度 磁靈敏度 飽和磁場 磁阻開關芯片　出處：《電子科技大學》2015年碩士論文　論文類型：學位論文

【摘要】：NiFe薄膜材料由于其具有較高的居里溫度、較大的各向異性磁阻效應(Anisotropic magnetoresistance effect,AMR)、較高的靈敏度以及低廉的價格等特點使其成為開發(fā)磁性傳感器首選的材料。本論文研究內容是通過實驗研究獲得較高AMR值、較低飽和磁場、較高靈敏度的NiFe磁性薄膜,并將其與相應的信號處理電路集成,制成磁阻傳感芯片。首先,研究了不同NiFe層厚度(t)對薄膜AMR值、磁靈敏度(Smax)以及飽和磁場(Hs)的影響。結果表明,隨著t的增大,AMR值和Smax值都是先增大后減小,在t=12 nm時AMR達到最大值1.25%,Smax達到最大值0.18,Hs先減小后增大,在t=12 nm時達到最小值12.5 Oe。其次,研究了在傾斜濺射狀態(tài)下NiFe薄膜易磁化軸的取向規(guī)律。結果表明:在傾斜狀態(tài)下,NiFe薄膜易化軸方向會沿著圓盤轉動的切線方向,且經(jīng)過真空磁場退火后易磁化軸與退火時添加的磁場方向一致。優(yōu)化了磁場退火工藝中退火溫度、退火時間對NiFe薄膜AMR值、磁靈敏度(Smax)以及飽和磁場(Hs)的影響。結果表明:隨著退火溫度的增加,NiFe薄膜的AMR值、Smax值以及飽和磁場(Hs)都是先增大后減小,在400℃時AMR達到最大值1.68,Smax達到最大值0.48,Hs先減小后增大,在300℃達到最小值5 Oe。隨著退火時間增加,NiFe薄膜的AMR值先增大后減小,在3 h時達到最大值1.78%,Smax值先增大后減小,在5 h時達到最大值0.65,Hs先減小后增大,在3 h達到最小值4.9Oe。此外,還研究了在傾斜濺射狀態(tài)下基片表面粗糙度對于NiFe薄膜磁性能的影響。結果表明:隨著σ從0.6 nm逐漸增大到1.12 nm,AMR值由1.05%逐漸減小到0.6%,幅值達43%,Smax值由0.12減小到0.025,幅值達79.17%,Hs由15.04 Oe逐漸增大到42.87 Oe,增幅達185%。隨著σ的增大,在易磁化軸方向上在易磁化軸方向上飽和磁化強度(M)由從1160 KA/m減小到1120 KA/m,減小幅度達3.4%;矯頑力(Hc)由3.6 Oe逐漸增大到6 Oe,增大幅度達66%,而在難磁化軸方向上Hc與M隨σ的變化不明顯。最后,測試了磁阻開關芯片的性能,發(fā)現(xiàn)芯片具有優(yōu)異的開關性能,已經(jīng)達到國外同類產(chǎn)品的性能。
[Abstract]:Because of its high Curie temperature, NiFe thin film material, The large anisotropic magnetoresistive effect and the high sensitivity and low price make it the preferred material for the development of magnetic sensors. The content of this thesis is to obtain higher AMR value and lower saturation magnetic field by experimental study. The magnetoresistive sensing chip is fabricated by integrating the high sensitivity NiFe magnetic film with the corresponding signal processing circuit. Firstly, the effects of different NiFe layer thickness on the AMR value, magnetic sensitivity Smax) and saturation magnetic field (Hsss) of the film are studied. With the increase of t, the value of AMR and Smax increased first and then decreased. The maximum value of AMR reached 1.25nm, and the maximum value of Smax decreased first, then increased, and reached the minimum value of 12.5Oeat 12nm. The orientation of the magnetization axis of NiFe thin films under inclined sputtering is studied. The results show that the orientation of the facilitation axis of nife thin films in inclined state is along the tangent direction of the disk rotation. The magnetization axis after vacuum magnetic field annealing is in the same direction as the magnetic field added during annealing. The annealing temperature and annealing time are optimized to the AMR value of NiFe film. The results show that with the increase of annealing temperature, the AMR value and the saturation magnetic field value of nife films increase first and then decrease. At 400 鈩，

本文編號：1550304