本文關鍵詞： 摻硼 納米硅顆粒 脈沖放電 納米硅漿料 方阻　出處：《太陽能學報》2017年11期 　論文類型：期刊論文

【摘要】：以摻硼硅錠(電阻率0.01Ω·cm)作為原材料,在液體介質中采用脈沖放電法制備出摻硼納米硅顆粒。利用掃描電子顯微鏡(SEM)、X射線衍射(XRD)、納米粒徑電位分析(PSDA)、原子發(fā)射光譜(ICP-OES)等測試手段對獲得的產物進行測試分析,絕大部分納米硅顆粒尺寸集中在30~60 nm,其硼含量的質量分數為19×10-4%。在此基礎上,將制備納米硅顆粒配制為質量分數為15%的納米硅漿料,通過絲網印刷在太陽硅片上,經850℃高溫燒結后,硅片表面方阻可由100Ω□/降到30Ω□/。
[Abstract]:Using boron-doped silicon ingot (resistivity 0.01 惟 路cm) as raw material, Boron doped nanocrystalline silicon particles were prepared by pulse discharge method in liquid medium. The obtained products were tested and analyzed by means of scanning electron microscopy (SEM), X-ray diffraction (XRD), nano-particle size potential analysis (PSDAA), atomic emission spectroscopy (ICP-OES), etc. Most of the nanocrystalline silicon particles are concentrated in 30 ~ 60 nm, and the boron content is 19 脳 10 ~ (-4). On this basis, nano-silicon particles are prepared into nano-silicon paste with mass fraction of 15% and printed on the solar silicon wafer by screen. After high temperature sintering at 850 鈩，

本文編號：1546085