激光轉(zhuǎn)移銅錫單IMC薄膜工藝及與銅錫薄膜界面行為
發(fā)布時間:2018-02-27 04:13
本文關鍵詞: IMC薄膜 激光前向轉(zhuǎn)移 Cu3Sn 單IMC焊點 界面行為 出處:《哈爾濱工業(yè)大學》2015年碩士論文 論文類型:學位論文
【摘要】:隨著微電子技術的進步,電子產(chǎn)品向著更小、更快、更薄方向發(fā)展,使微互連焊點的尺寸減小,焊點內(nèi)金屬間化合物(Intermetallic Compound,IMC)所占體積比增大,焊點向著微納尺度進一步發(fā)展將促使全部由IMC構(gòu)成的焊點出現(xiàn),由單種IMC構(gòu)成的焊點相比傳統(tǒng)焊點有其獨特優(yōu)良的性能,因此,對快速制備組織可控的單IMC焊點進行工藝探索和研究具有重要意義。本文首先對電沉積錫進行參數(shù)優(yōu)化,并對電沉積制備多層銅錫薄膜進行工藝研究,隨后完成石英基板上單IMC薄膜(Cu3Sn)的制備。利用激光前向轉(zhuǎn)移技術(Laser-Induced Forward Transfer)將石英基板上的IMC薄膜轉(zhuǎn)移到接收基板上,實現(xiàn)LIFT轉(zhuǎn)移IMC薄膜的參數(shù)(功率、離焦值)優(yōu)化,對LIFT轉(zhuǎn)移機理進行分析,并對激光輻照薄膜溫度場分布進行了模擬。利用LIFT技術將IMC薄膜轉(zhuǎn)移到銅基體或Cu/Sn薄膜上,制備Cu/Cu3Sn/Sn或Cu3Sn/Sn/Cu結(jié)構(gòu),高溫存儲反應后研究其界面行為,為利用LIFT技術快速誘發(fā)制備單IMC焊點提供技術依據(jù)。研究結(jié)果表明:分別通過磁控濺射、電沉積在石英基板上制備Cu層和Sn層后,300℃保溫0.25h可完成單Cu3Sn薄膜的制備,適當增加保溫時間可減小薄膜因內(nèi)應力從基板上剝落的傾向。利用電沉積方法制備多層Cu/Sn薄膜時,因銅錫置換反應而使多層薄膜缺陷較多,厚度難以控制。經(jīng)實驗證明激光的單脈沖功率、聚焦點位置、基板間距、脈寬都是影響LIFT轉(zhuǎn)移IMC薄膜的重要因素,高斯激光能量分布不均勻,LIFT轉(zhuǎn)移IMC薄膜易得到“火山口”形沉積點,增大激光功率,沉積點“火山口”形趨勢越明顯,增大離焦值可以使高斯激光能量分布更均勻,沉積點厚度分布更均勻,通過控制單脈沖功率和離焦值可獲得厚度分布均勻的沉積點。沉積點尺寸隨單脈沖功率增加而增加,隨離焦值增加先增加后下降,LIFT過程中,長脈沖激光轉(zhuǎn)移存在熱擴散,IMC薄膜主要以熔化態(tài)及固態(tài)形式進行轉(zhuǎn)移。EDS和XRD結(jié)果證明薄膜轉(zhuǎn)移前后成分沒有明顯變化。數(shù)值模擬結(jié)果顯示,激光功率越大,作用時間越長,在束縛界面處的溫度場分布越不均勻,徑向梯度越大(特別是中心區(qū)域),激光通過散焦可以讓束縛界面溫度場分布更均勻,與實驗結(jié)果完全相符。Cu/Cu3Sn/Sn結(jié)構(gòu)保溫反應后形成單IMC層,部分區(qū)域存在氧化層,氧化層與Cu3Sn層結(jié)合較好。Cu3Sn/Sn/Cu結(jié)構(gòu)在保溫反應后形成單IMC層,未施壓條件下轉(zhuǎn)移IMC層與新生成的IMC層部分區(qū)域發(fā)生了較好結(jié)合。
[Abstract]:With the progress of microelectronics technology, electronic products are developing in the direction of smaller, faster and thinner, which reduces the size of microinterconnection solder joint and increases the volume ratio of intermetallic compound intermetallic component IMCin solder joint. The further development of solder joints towards micro and nano scale will promote the appearance of solder joints composed of all IMC. The solder joints composed of single IMC have unique and excellent properties compared with traditional solder joints. It is of great significance to explore and study the rapid preparation of single IMC solder joints with controllable microstructure. In this paper, the parameters of electrodeposition of tin are optimized, and the process of preparing multilayer copper-tin thin films by electrodeposition is studied. Then the preparation of single IMC thin film Cu3Snon quartz substrate was completed. Laser-Induced Forward transfer technique was used to transfer the IMC film on quartz substrate to the receiving substrate, and the parameters (power, defocus value) of LIFT transfer IMC film were optimized. The mechanism of LIFT transfer was analyzed, and the temperature field distribution of laser irradiated films was simulated. IMC films were transferred to copper or Cu/Sn films by LIFT technique to prepare Cu/Cu3Sn/Sn or Cu3Sn/Sn/Cu structures. The interface behavior was studied after high temperature storage reaction. The results show that Cu layer and Sn layer can be deposited on quartz substrate by magnetron sputtering and deposited on quartz substrate at 300 鈩,
本文編號:1541058
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