本文關(guān)鍵詞： AACVD Al、N摻雜ZnO 雙源 霧化間隔 第一性原理計算　出處：《燕山大學(xué)》2015年碩士論文　論文類型：學(xué)位論文

【摘要】：氧化鋅透明導(dǎo)電薄膜由于在光學(xué)器件、透明導(dǎo)電電極以及太陽能電池薄膜潛在的應(yīng)用而越來越引起重視。本文通過氣溶膠輔助化學(xué)氣相沉積法(AACVD)制備Al、N摻雜ZnO薄膜并通過第一性原理計算給以理論上指導(dǎo)。通過X射線衍射儀(XRD)、紫外-可見分光光度計(UV-Vis Spectrophotometer)、熒光光譜儀、四探針、原子力顯微鏡(AFM)以及掃描電子顯微鏡(SEM)分別對ZnO薄膜結(jié)構(gòu)、光電學(xué)性能以及表面形貌進(jìn)行表征。分析結(jié)果表明通過AACVD法制備的薄膜都為具有高純度的六方纖鋅礦結(jié)構(gòu)的ZnO。前驅(qū)液體積對AZO薄膜晶體取向和結(jié)晶度沒有太大影響,但會明顯影響到薄膜的光電學(xué)性能以及薄膜的形貌,其中前驅(qū)液為35 ml時薄膜具有最佳的性能,方阻僅為1.63 K?/□,透過率為88.53%。通過雙源法可以將不同前驅(qū)液制備的薄膜各種優(yōu)良性能結(jié)合到一起,即制備具有較高透過率又具有低電阻的高質(zhì)量AZO薄膜。當(dāng)乙醇為15 ml和甲醇為20 ml時AZO薄膜具有最佳的光電學(xué)性能,質(zhì)量因子為5.64×10-4。薄膜的表面形貌也嚴(yán)重依賴前驅(qū)液中乙醇和甲醇的比例。采用間歇式霧化會提高薄膜的各方面性能,通過對霧化間隔以及霧化時間對薄膜性能的影響的研究當(dāng)霧化時間一定時,霧化間隔4 min所制備的薄膜具有最佳的性能,當(dāng)霧化間隔恒定時,霧化時間為8 min時AZO性能最好。N摻雜ZnO薄膜時,Zn和N最佳比例為1:0.5,通過Al-N共摻與單摻ZnO薄膜的比較,共摻ZnO薄膜的性能要優(yōu)于單摻時ZnO薄膜的性能。溫度對Al-N薄膜性能的影響非常明顯,尤其在光學(xué)性能和形貌上。當(dāng)溫度為350℃時薄膜透過率僅為65.7%,制備Al-N共摻薄膜最佳的襯底溫度為400℃。通過第一性原理計算,N原子替代O原子和Al-N共摻時,ZnO呈現(xiàn)p型導(dǎo)電,但當(dāng)N替代Zn位時薄膜為n型導(dǎo)電。不同摻雜ZnO所需要的形成能也不同,Al摻雜和Al-N共摻所需要的形成能低,而N替代O位時所需要的形成能要低于N替代Zn位時所需要的形成能。缺陷會明顯影響Al-N共摻ZnO的電子結(jié)構(gòu)和光學(xué)性能,當(dāng)ZnO中存在Oi缺陷時所需要的形成能最低。
[Abstract]:Zinc oxide transparent conductive thin films due to optical devices, The potential applications of transparent conductive electrodes and solar cell thin films have attracted more and more attention. In this paper, AlN doped ZnO thin films were prepared by aerosol assisted chemical vapor deposition (ACVD) and theoretically indicated by first principles calculation. Through X-ray diffractometer, UV-Vis Spectrophotometerium, fluorescence Spectrometer, UV-Vis Spectrophotometer, UV-Vis Spectrophotometer, fluorescence Spectrometer, UV-Vis Spectrophotometer, fluorescence Spectrometer, UV-Vis Spectrophotometer, fluorescence Spectrometer, Four probes, atomic force microscopy (AFM) and scanning electron microscopy (SEM) were used to study the structure of ZnO films. The results showed that the films prepared by AACVD method were all hexagonal wurtzite structures with high purity. The volume of precursor solution had no great effect on the orientation and crystallinity of AZO thin films. However, the optoelectronic properties and the morphology of the films are obviously affected. The film has the best performance when the precursor solution is 35 ml, and the square resistance is only 1.63 K? R -, the transmittance is 88.53. Through the dual source method, we can combine all kinds of excellent properties of the films prepared by different precursors. High quality AZO thin films with high transmittance and low resistance were prepared. When ethanol was 15 ml and methanol was 20 ml, AZO thin films had the best optoelectronic properties. The quality factor is 5.64 脳 10 ~ (-4). The surface morphology of the film also depends heavily on the ratio of ethanol to methanol in the precursor solution. The effects of atomization interval and atomization time on the properties of the film were studied. When the atomization time was constant, the film prepared by the atomization interval of 4 min had the best performance, when the atomization interval was constant, When the atomization time is 8 min, the best ratio of Zn and N is 1: 0.5 when AZO is doped with ZnO. The comparison between Al-N co-doped and single-doped ZnO films is carried out. The properties of co-doped ZnO films are better than that of single-doped ZnO films, and the effect of temperature on the properties of Al-N films is very obvious. Especially in terms of optical properties and morphology, when the temperature is 350 鈩，

本文編號：1537060