本文關(guān)鍵詞： ZnTe納米線 可控?fù)诫s 金納米顆粒修飾 光電探測(cè)器　出處：《合肥工業(yè)大學(xué)》2015年碩士論文　論文類型：學(xué)位論文

【摘要】：在過去的十年中,具有高的縱橫比的一維半導(dǎo)體納米結(jié)構(gòu),如納米線(NWs),納米帶(NRs),碳納米管(NTs)和多支鏈結(jié)構(gòu),由于其新穎的物理和化學(xué)性質(zhì)已經(jīng)吸引了相當(dāng)多的研究興趣。在半導(dǎo)體納米結(jié)構(gòu)這個(gè)巨大的家族中,II-VI族半導(dǎo)體納米材料碲化鋅(ZnTe)由于其獨(dú)特的光學(xué)特性已得到了特別的關(guān)注和研究。然而本征的ZnTe納米線電阻率過高導(dǎo)致其光電性能不夠理想,限制了其在光電器件領(lǐng)域的應(yīng)用。本文中采用了兩種方法來提高ZnTe納米線的光電特性,先是選取Ga/Ga2O3作為摻雜源利用熱蒸發(fā)的方法實(shí)現(xiàn)了對(duì)ZnTe納米線的可控?fù)诫s,大大增加了它的光電流和暗電流；接著通過溶液法對(duì)ZnTe進(jìn)行了金納米顆粒的修飾,利用其表面等離子體共振效應(yīng)增加了ZnTe納米線對(duì)光的吸收。經(jīng)過摻雜和修飾后的ZnTe納米線對(duì)光的響應(yīng)變的更加靈敏,更加適合應(yīng)用于光電器件的制備。到目前為止,基于本征ZnTe納米線的光電器件的性能仍不夠理想,因此本文利用ZnTe:Ga納米線／石墨烯形成的肖特基結(jié)和修飾金顆粒后的ZnTe納米線構(gòu)建了兩種不同的光電探測(cè)器。經(jīng)過分析,兩種光電探測(cè)器都表現(xiàn)出非常好的穩(wěn)定性和重復(fù)性。另外,ZnTe:Ga納米線／石墨烯肖特基結(jié)光電探測(cè)器的光譜響應(yīng)度和探測(cè)率分別達(dá)到4.17×103A/W和3.19×1013 cmHz1/2W-1,而修飾金顆粒的ZnTe光電探測(cè)器則為5.11×103 AW-1和3.28×1013 cmHZ1/2W-1。同本征ZnTe納米線相比,兩種新型光電探測(cè)器的響應(yīng)率和探測(cè)能力都得到了很大的提高。最后,我們希望通過Ga摻雜和金顆粒修飾使ZnTe納米線在未來可以構(gòu)建更高性能的光電器件。
[Abstract]:Over the past decade, one-dimensional semiconductor nanostructures with high aspect ratios, such as nanowires, nanobelts, carbon nanotubes (NTs) and multi-branched structures, have been developed. Due to its novel physical and chemical properties, it has attracted considerable interest. In this huge family of semiconductor nanostructures, the II-VI semiconductor nanomaterials Zn-ZnTeTe have been obtained due to their unique optical properties. Special attention and research. However, the intrinsic resistivity of ZnTe nanowires is too high, resulting in its optoelectronic performance is not ideal. In this paper, two methods are used to improve the photoelectric properties of ZnTe nanowires. Firstly, Ga/Ga2O3 is chosen as the dopant source to realize the controllable doping of ZnTe nanowires. The photocurrent and dark current of ZnTe were greatly increased, and then the gold nanoparticles were modified by solution method. The light absorption of ZnTe nanowires is increased by using its surface plasmon resonance effect. The photoresponse of doped and modified ZnTe nanowires becomes more sensitive, which is more suitable for the fabrication of optoelectronic devices. The performance of photovoltaic devices based on intrinsic ZnTe nanowires is still not ideal. Therefore, two kinds of photodetectors have been constructed by using Schottky junctions formed by ZnTe:Ga nanowires / graphene and ZnTe nanowires modified with gold particles. In addition, the spectral responsivity and detectivity of ZnTeGa nanowire / graphene Schottky junction photodetectors are 4.17 脳 103 / W and 3.19 脳 10 ~ (13) cm Hz1 / 2W-1, respectively, while the ZnTe optoelectronic photodetectors modified with gold particles are very stable and reproducible. The detectors are 5.11 脳 10 ~ 3 AW-1 and 3.28 脳 10 ~ (13) cm HZ1 / 2W-1.Compared with intrinsic ZnTe nanowires, The responsivity and detection ability of the two new photodetectors have been greatly improved. Finally, we hope that ZnTe nanowires will be able to construct higher performance optoelectronic devices in the future through Ga doping and gold particle modification.
【學(xué)位授予單位】：合肥工業(yè)大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TB383.1

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