本文關(guān)鍵詞： F摻雜SnO2晶體 FTO導(dǎo)電薄膜 導(dǎo)電能 透光性　出處：《哈爾濱理工大學(xué)》2015年碩士論文　論文類型：學(xué)位論文

【摘要】：透明導(dǎo)電薄膜由于其優(yōu)良的透光性能與導(dǎo)電性能，一直是研究的熱點，目前生產(chǎn)研究最多的透明導(dǎo)電薄膜是金屬氧化物薄膜，以SnO2為導(dǎo)電基礎(chǔ)材料的導(dǎo)電薄膜多種多樣，其中以ITO(Indium Tin Oxide)、FTO(Fluorine-doped TinOxide)、ATO(Antimony Tin Oxide)應(yīng)用最為廣泛，而FTO因其價格低廉，性能優(yōu)越，制備工藝簡單在導(dǎo)電薄膜領(lǐng)域一直屬于應(yīng)用比較廣泛的薄膜，特別是在電化學(xué)領(lǐng)域。 本文采用溶膠水熱法并熱處理后，成功的制備了F摻雜SnO2導(dǎo)電薄膜。通過討論晶型轉(zhuǎn)變溫度及合理摻雜溫度以確定最優(yōu)的制備條件。文章討論了溶膠的濃度、F/Sn等因素對導(dǎo)電薄膜電學(xué)光學(xué)性能的影響。測試表征手段包括X射線衍射儀、掃描電鏡、透射電鏡、紫外可見分光光度計、傅里葉紅外測試儀、差熱及熱重分析儀、霍爾效應(yīng)測試儀等。 測試結(jié)果顯示，溶膠凝膠法制備的F摻雜SnO2晶體顆粒尺寸為納米級，晶粒尺寸在10nm左右。F離子的摻雜對SnO2晶體有輕微的影響，通過X射線衍射、透射電鏡、紅外等等測試分析摻雜前后的變化。勻膠法生成的薄膜表面平整，連續(xù)性好，沒有明顯的缺陷，薄膜與玻璃之間結(jié)合良好，薄膜厚度在3μm左右�；魻枩y試顯示載流子濃度隨著F摻雜量的增加而增加，遷移率的變化趨勢與載流子濃度趨勢相反，顯示下降趨勢，當F/Sn比為0.8時，，導(dǎo)電薄膜的表面電阻達到最低值，為185/□。當F/Sn比為0.1時，透光性顯示最優(yōu)，可達到90%。透明導(dǎo)電薄膜性能指數(shù)ΦTC值，顯示了集導(dǎo)電性能和透光性能一身的綜合性能表征，ΦTC值顯示，當F/Sn比為0.2時，ΦTC值最大，達2.23×10-4，表明綜合性能最優(yōu)。結(jié)合重摻雜理論，分析發(fā)現(xiàn)，滿足透明導(dǎo)電薄膜的最優(yōu)條件時，其薄膜摻雜濃度屬于重摻雜簡并半導(dǎo)體范疇，簡并半導(dǎo)體具有高載流子濃度，低電阻等特點。
[Abstract]:Transparent conductive thin films have been the focus of research because of their excellent transmittance and conductive properties. At present, the most widely studied transparent conductive films are metal oxide films, and the conductive films based on SnO2 are varied. Among them, ITO(Indium TinOxide, FTO(Fluorine-doped TinOxide-antimony TinOxide is the most widely used, and FTO has been widely used in the field of conducting film, especially in the electrochemical field, because of its low price and superior performance. In this paper, sol-hydrothermal method and heat treatment were used. F doped SnO2 conductive thin films were successfully prepared. The optimum preparation conditions were determined by discussing the crystal transition temperature and the reasonable doping temperature. The influence of sol concentration, F / Sn and other factors on the electrical and optical properties of the conductive thin films was discussed in this paper. Response. Means of characterization include X-ray diffractometer, Scanning electron microscope, transmission electron microscope, ultraviolet visible spectrophotometer, Fourier infrared tester, differential thermal and thermogravimetric analyzer, Hall effect tester, etc. The results show that the size of F-doped SnO2 crystals prepared by sol-gel method is nanocrystalline, and the doping of F-ions at about 10nm has a slight influence on SnO2 crystals, which is characterized by X-ray diffraction and transmission electron microscopy. Infrared and so on test and analyze the change before and after doping. The film formed by the uniform glue method has a smooth surface, good continuity, no obvious defects, and a good bond between the film and the glass. The thickness of the film is about 3 渭 m. Hall test shows that the carrier concentration increases with the increase of F doping content, and the change trend of mobility is opposite to that of carrier concentration, showing a downward trend, when the F / Sn ratio is 0.8. The surface resistance of the conductive film reaches the lowest value, that is, 18.5%. When the F / Sn ratio is 0.1, the transparency of the film can reach 90%. The transparent conductive film has a performance index 桅 TC, which shows the comprehensive properties of both the conductivity and the transmittance, and the 桅 TC value shows that, When the F / Sn ratio is 0.2, the 桅 TC value is the largest, reaching 2.23 脳 10 ~ (-4), which indicates that the comprehensive performance is the best. Combining with the heavy doping theory, it is found that the doping concentration of the thin film belongs to the category of heavily doped degenerate semiconductors when the optimum condition of transparent conductive film is satisfied. Degenerate semiconductors are characterized by high carrier concentration and low resistance.
【學(xué)位授予單位】：哈爾濱理工大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2015
【分類號】：TB383.2;O614.432

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