本文關(guān)鍵詞： 單晶碳化硅 化學(xué)機(jī)械拋光 芬頓反應(yīng) 化學(xué)反應(yīng)參數(shù) 材料去除率 表面粗糙度　出處：《機(jī)械設(shè)計(jì)與制造》2017年09期 　論文類型：期刊論文

【摘要】：選擇影響化學(xué)機(jī)械拋光化學(xué)反應(yīng)速率的參數(shù):催化劑濃度、氧化劑濃度、拋光液的pH值、拋光液溫度等進(jìn)行了試驗(yàn),研究了它們對(duì)基于芬頓反應(yīng)的單晶SiC化學(xué)機(jī)械拋光效果的影響規(guī)律。發(fā)現(xiàn)只有當(dāng)H_2O_2濃度高于20%、Fe_3O_4濃度高于1.25%時(shí),增大H_2O_2、Fe_3O_4濃度,材料去除率才會(huì)顯著越高,此時(shí)材料去除速率由化學(xué)液腐蝕速度與磨料機(jī)械去除速度共同決定;低于此范圍時(shí)由磨料的機(jī)械作用決定。溫度升高會(huì)加速H_2O_2分解,抑制羥基自由基·OH的生成,減緩化學(xué)腐蝕,降低材料去除率。當(dāng)Fe_3O_4濃度、H_2O_2濃度、pH值、拋光液溫度分別為1.25%、15%、7、41℃時(shí),化學(xué)腐蝕與機(jī)械去除的協(xié)調(diào)性及磨料的分散性較好,表面粗糙度最低;當(dāng)它們分別為5%、25%、9.3、15℃時(shí),材料去除率最高。
[Abstract]:The parameters influencing the chemical reaction rate of chemical-mechanical polishing, such as the concentration of catalyst, the concentration of oxidant, the pH value of polishing liquid, the temperature of polishing liquid, etc. In this paper, we have studied their effect on the chemical mechanical polishing of single crystal SiC based on Fenton reaction. It is found that only when the concentration of HStut _ 2O _ 2 is higher than 20 / 20 / Fe3O _ 4 and the concentration of S _ 2O _ 2Fe _ 3O _ 4 is higher than 1.25, the material removal rate will be significantly higher by increasing the concentration of H _ 2O _ 2Fe _ 3O _ 4, At this time, the material removal rate is determined by both chemical liquid corrosion rate and abrasive mechanical removal rate; below this range, it is determined by the mechanical action of abrasive. The increase of temperature accelerates the decomposition of H _ 2O _ 2, inhibits the formation of hydroxyl radical 路OH, and slows down chemical corrosion. Reducing the material removal rate. When the concentration of Fe_3O_4 and the concentration of H _ 2O _ 2 are as high as pH value, and the polishing liquid temperature is 1.2515 / 741 鈩，

本文編號(hào)：1494701