本文關(guān)鍵詞： ZnO納米陣列 硅薄膜太陽(yáng)能電池 等離子增強(qiáng)化學(xué)氣相沉淀法　出處：《湖南師范大學(xué)》2015年碩士論文　論文類(lèi)型：學(xué)位論文

【摘要】：本碩士論文提出了一種基于ZnO納米陣列的n-ZnO/p-Si異質(zhì)結(jié)太陽(yáng)能電池,其結(jié)構(gòu)為:FTO或AZO透明導(dǎo)電玻璃/ZnO籽晶層/ZnO納米陣列/硅薄膜/金屬電極。本論文具體研究了該太陽(yáng)能電池結(jié)構(gòu)的制備方法和表征,通過(guò)改變工藝條件和制備參數(shù)研究制備此結(jié)構(gòu)的太陽(yáng)能電池。電池的主要制備過(guò)程為:首先在FTO或AZO透明導(dǎo)電玻璃襯底上采用溶膠-凝膠法形成ZnO籽晶層,化學(xué)溶液生長(zhǎng)法在籽晶層上制備ZnO納米陣列;其次采用等離子增強(qiáng)化學(xué)氣相沉淀法(PECVD)在ZnO納米陣列表面制備硅薄膜;最后在硅薄膜上蒸鍍金屬電極制備成太陽(yáng)能電池。與其他太陽(yáng)能電池結(jié)構(gòu)相比,本電池結(jié)構(gòu)中硅薄膜在ZnO納米棒上形核生長(zhǎng),形成硅薄膜包覆ZnO納米陣列的結(jié)構(gòu)。此結(jié)構(gòu)設(shè)計(jì)使得硅薄膜與納米陣列全面接觸,能充分利用納米陣列傳遞載流子的作用,提升電池的光伏轉(zhuǎn)換效率。本論文采用金屬Al誘導(dǎo)晶化法制備多晶硅薄膜,實(shí)驗(yàn)中引入的元素Al擴(kuò)散到ZnO中為N型摻雜,擴(kuò)散到Si中為P型摻雜,不僅避免在制備或使用過(guò)程中摻雜元素互擴(kuò)散導(dǎo)致的電池性能變化,又能形成有效的pn結(jié),提高電池的開(kāi)路電壓。本實(shí)驗(yàn)室已經(jīng)成功制備出硅薄膜全面包覆ZnO納米陣列的電池結(jié)構(gòu)。在實(shí)驗(yàn)中,通過(guò)改變ZnO生長(zhǎng)中前驅(qū)體Zn2+的濃度、反應(yīng)時(shí)間,調(diào)控制備N(xiāo)型ZnO納米陣列形貌;通過(guò)改變制備硅薄膜的制備溫度和沉積時(shí)間、硼烷摻雜濃度等制備包覆ZnO納米陣列的P型硅薄膜。利用X射線衍射儀、紫外-可見(jiàn)分光光度計(jì)、掃描電子顯微鏡、激光拉曼光譜儀和四探針對(duì)制備出的太陽(yáng)能電池各層薄膜的晶體結(jié)構(gòu)、表面形貌、光學(xué)性質(zhì)和電學(xué)性質(zhì)進(jìn)行探究。
[Abstract]:This paper presents a solar cell arrays of ZnO n-ZnO/p-Si heterogeneous based on the structure of FTO or AZO transparent conductive glass /ZnO seed layer /ZnO nano array / silicon film / metal electrode. This paper studied the preparation method and characterization of the solar cell structure, by changing the process conditions and the preparation parameters on Preparation of solar cell structure. The main battery preparation process is as follows: first, in the FTO or AZO transparent conductive glass substrates by sol-gel method to form the ZnO seed layer, the preparation of ZnO nano arrays on the seed layer by chemical solution growth method; followed by plasma enhanced chemical vapor precipitation (PECVD) preparation of silicon films on ZnO nano array surface; finally in silicon thin film deposited on metal electrodes prepared by solar cells. Compared with other solar cell structure, the cell structure of silicon films on ZnO nano rod On the nucleation and growth, the formation structure of silicon thin film coated ZnO nano array structure. This design makes the silicon thin film and nano array full contact, can fully transfer the carrier using nano array, photovoltaic conversion efficiency of the battery. This paper adopts the metal induced crystallization of polycrystalline silicon thin films by Al method, Al element diffusion experiment is introduced to ZnO type N doped, diffused to Si for P type doping, not only to avoid changes in battery performance preparation or doping process leads to mutual diffusion, and can effectively improve the formation of PN junction, open circuit voltage of the battery. The lab has successfully prepared cell structure of silicon thin film full covered ZnO nano array. In the experiment, the concentration change of precursor ZnO growth Zn2+ reaction time, control of preparation of N type ZnO nano array morphology; by changing the preparation of silicon thin film preparation temperature and deposition time, boron P type silicon thin film were prepared with ZnO doped nano array. By using X - ray diffractometer, UV VIS spectrophotometer, scanning electron microscope, the crystal structure of solar cell, laser Raman spectroscopy and four probe on the preparation of the each layer of film surface morphology, optical properties and electrical properties to explore.

【學(xué)位授予單位】：湖南師范大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類(lèi)號(hào)】：TM914.4;TB383.1

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相關(guān)期刊論文 前2條

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本文編號(hào)：1481869