本文關(guān)鍵詞： 微波 介電譜 載流子 鈣鈦礦薄膜　出處：《河北大學(xué)》2017年碩士論文　論文類型：學(xué)位論文

【摘要】：微波介電譜測(cè)量技術(shù)是一種基于微波與物質(zhì)材料相互作用的測(cè)量技術(shù)。該測(cè)量技術(shù)具有非接觸測(cè)量,信號(hào)采集速度快和測(cè)量時(shí)間分辨高等優(yōu)點(diǎn)。因此,微波介電譜測(cè)量技術(shù)在光電功能材料載流子復(fù)合動(dòng)力學(xué)診斷領(lǐng)域具有良好的應(yīng)用前景。本文首先根據(jù)半導(dǎo)體光生載流子復(fù)合動(dòng)力學(xué)的微波介電譜測(cè)量原理,搭建了微波介電譜測(cè)量系統(tǒng),其中包括相關(guān)微波器件的選擇和微波介電譜測(cè)量系統(tǒng)的測(cè)試兩部分。在微波器件選擇方面,微波諧振腔是微波介電譜測(cè)量系統(tǒng)中的核心部件。本文使用High Frequency Structure Simulator(HFSS)軟件對(duì)微波諧振腔中的電磁場(chǎng)分布進(jìn)行了模擬仿真。仿真結(jié)果顯示,仿真優(yōu)化結(jié)果與理論計(jì)算值一致;在TE103諧振模式下,諧振腔內(nèi)電磁場(chǎng)分布的仿真結(jié)果顯示,電場(chǎng)強(qiáng)度最強(qiáng)的位置位于諧振腔的中央位置,并以此作為諧振腔側(cè)壁開縫的依據(jù)。在納秒脈沖(脈沖寬度5-7 ns)激發(fā)條件下,微波介電譜測(cè)量系統(tǒng)的時(shí)間分辨率可以到達(dá)15 ns(高斯型儀器響應(yīng)函數(shù),半高全寬),在飛秒脈沖(脈沖寬度小于100 fs)激發(fā)條件下,系統(tǒng)測(cè)量時(shí)間分辨率可以達(dá)到1-2 ns。有機(jī)金屬鹵化物鈣鈦礦(CH_3NH_3PbX_3,X-Cl、Br、I)作為一種新興的光伏材料,是目前太陽(yáng)能電池領(lǐng)域研究的重點(diǎn)。對(duì)鈣鈦礦薄膜光生載流子復(fù)合動(dòng)力學(xué)的研究可以為鈣鈦礦太陽(yáng)能電池的設(shè)計(jì)與生產(chǎn)提供有力的科學(xué)依據(jù)。本文利用搭建的微波介電譜測(cè)量系統(tǒng),對(duì)有機(jī)金屬鹵化物鈣鈦礦薄膜材料的載流子復(fù)合動(dòng)力學(xué)進(jìn)行了研究,工作主要分為三個(gè)部分:(1)本文利用微波介電譜測(cè)量技術(shù),從光生載流子復(fù)合動(dòng)力學(xué)的角度說明了Cl元素的摻入對(duì)鈣鈦礦薄膜光物理特性的影響。實(shí)驗(yàn)結(jié)果顯示,相比CH_3NH_3PbI_3鈣鈦礦薄膜,CH_3NH_3PbI_(3-x)Cl_x鈣鈦礦薄膜的自由載流子復(fù)合壽命從67 ns增加到157 ns,淺束縛能級(jí)(束縛能級(jí)深度5-30 meV)載流子復(fù)合壽命從290 ns增加到492 ns。此外,通過對(duì)比CH_3NH_3PbI_3和CH_3NH_3PbI_(3-x)Cl)x鈣鈦礦薄膜的光生載流子復(fù)合動(dòng)力學(xué)還發(fā)現(xiàn),后者淺束縛能級(jí)載流子的熱活化過程對(duì)載流子復(fù)合動(dòng)力學(xué)影響更為顯著。因此可以推斷,Cl元素的摻雜在薄膜中引入了更多的淺束縛態(tài),同時(shí)減少了深束縛態(tài)密度。(2)本文在共振激發(fā)模式下和非共振激發(fā)模式下對(duì)CH_3NH_3PbBr_3鈣鈦礦薄膜的光生載流子復(fù)合動(dòng)力學(xué)進(jìn)行了測(cè)量。實(shí)驗(yàn)結(jié)果表明,光生載流子復(fù)合過程分為一個(gè)快速衰減階段和一個(gè)緩慢衰減階段。當(dāng)自由載流子濃度減少到一定程度后,自由載流子與淺束縛能級(jí)(束縛能級(jí)深度5-30 meV)載流子達(dá)到熱平衡。具體而言,在共振激發(fā)模式下(558 nm),自由載流子和淺束縛能級(jí)載流子達(dá)到熱平衡所需要的時(shí)間大約是56 ns;而在非共振激發(fā)下(355 nm),自由載流子和淺束縛能級(jí)載流子達(dá)到熱平衡所需要的時(shí)間更長(zhǎng),大約是848 ns。(3)本文還研究了CH_3NH_3PbI_3鈣鈦礦薄膜經(jīng)過光浴-暗置處理后薄膜的光生載流子復(fù)合動(dòng)力學(xué)變化。實(shí)驗(yàn)結(jié)果顯示,光浴-暗置后鈣鈦礦薄膜的光生載流子產(chǎn)率有了明顯的增加,但隨著再次光浴處理光生載流子產(chǎn)率快速降低。
[Abstract]:Microwave dielectric spectrum measurement technique is a measurement of microwave interaction with materials. Based on the measurement technology with non contact measurement, signal acquisition speed and the measurement of time resolved advantages. Therefore, microwave dielectric spectrum measurement technology in photoelectric functional material carrier composite dynamic diagnosis field has a good application prospect in this paper. According to the semiconductor minority carrier recombination kinetics of microwave dielectric spectrum measurement principle, build a microwave dielectric spectrum measurement system, including two parts related to microwave devices and microwave dielectric spectrum measurement system. In the aspect of the selection of microwave devices, microwave resonant cavity microwave dielectric spectrum measurement is the core component in the system this paper uses the High Frequency Structure. Simulator (HFSS) software of electromagnetic field distribution in the microwave cavity is simulated. The simulation results show that the imitation So the optimization results are consistent with theoretical values; in TE103 resonant mode, the resonant cavity of the electromagnetic field simulation results show that the electric field intensity of the strongest position is located in the cavity of the central position, and as the cavity side wall slot basis. In nanosecond pulse (pulse width of 5-7 NS) under the excitation of dielectric, time resolution the microwave spectrum measurement system can reach 15 ns (Gauss type instrument response function, full width at half maximum), in the femtosecond pulse (pulse width less than 100 fs) under the excitation system, the measuring time resolution can reach 1-2 ns. organic metal halide perovskite (CH_3NH_3PbX_3, X-Cl, Br, I) is a kind of new photovoltaic materials. Is the focus of current research in the field of solar cells. Provide scientific basis for the design and production of Perovskite Thin Films of photogenerated carrier recombination dynamics for perovskite solar cells. In this paper, using microwave dielectric structures of the spectrum measurement system, carrier recombination kinetics of organic metal halide perovskite thin films were studied. The main work is divided into three parts: (1) using microwave dielectric spectrum measurement technology, from the minority carrier recombination dynamics point of view that the incorporation of Cl effect on the photophysical properties of Perovskite Thin Films. The experimental results show that compared with CH_3NH_3PbI_3 Perovskite Thin Films, CH_3NH_3PbI_ (3-x) Cl_x free carrier recombination lifetime of Perovskite Thin films increased from 67 ns to 157 ns, shallow levels (levels of depth 5-30 meV) the carrier lifetime increased from 290 ns to 492 ns. in addition, through the comparison of CH_3NH_3PbI_3 and CH_3NH_3PbI_ (3-x) Cl) x perovskite films photogenerated carrier recombination dynamics also found that the shallow levels of the carrier thermal activation process of the carrier recombination dynamics. Sound is more significant. So it can be inferred that Cl doping introduced shallow bound more in the film, while reducing the depth bound density. (2) the light of CH_3NH_3PbBr_3 Perovskite Thin Films in the resonant excitation mode and excitation mode of non resonance carrier recombination dynamics were measured. The experimental results show that that the minority carrier recombination process into a rapid decay phase and a slow decay stage. When reducing the free carrier concentration to a certain extent, free carrier and shallow levels (levels of depth 5-30 meV) carrier to reach thermal equilibrium. Specifically, the resonance excitation mode (558 nm), free the carrier and shallow levels of carriers to reach the thermal equilibrium time required is about 56 ns; and in the non resonant excitation (355 nm), the free carrier and shallow levels of carrier to reach thermal balance A longer period of time, is about 848 ns. (3) this paper also studied the CH_3NH_3PbI_3 Perovskite Thin Films after dark the light bath after treatment thin film composite carrier dynamics. The experimental results show that the light - Dark bath after the Perovskite Thin Films of photoexcited carriers yield has increased significantly, but again with light light bath treatment carrier yield decreased rapidly.

【學(xué)位授予單位】：河北大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類號(hào)】：TB383.2;O649.5

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