本文關(guān)鍵詞： 透明導(dǎo)電膜 磁控濺射 ITO/Ag/ITO FTO/AgFTO AZO/Ag/AZO　出處：《山東建筑大學(xué)》2015年碩士論文　論文類型：學(xué)位論文

【摘要】：傳統(tǒng)透明導(dǎo)電材料摻錫氧化銦(ITO)具有方阻低、可見光范圍內(nèi)透過性好等優(yōu)點,被廣泛用作各種顯示器和太陽能電池的透明電極。然而,稀缺資源In不但價格昂貴,而且有毒,減少或避免對In的消耗必然成為透明導(dǎo)電膜的發(fā)展趨勢。因此,可作為ITO替代品的摻氟氧化錫(FTO)和摻鋁氧化鋅(AZO)受到了人們越來越多的關(guān)注。但是,ITO、FTO和AZO等透明導(dǎo)電氧化物(TCO)的導(dǎo)電性能受制于半導(dǎo)體的導(dǎo)電機(jī)制,導(dǎo)電率難以實現(xiàn)進(jìn)一步提高,故TCO已經(jīng)越來越不能滿足先進(jìn)光電裝置對其導(dǎo)電性能提出的更高要求。因此,深入探究比單層TCO厚度更薄、導(dǎo)電更好的三明治結(jié)構(gòu)復(fù)合膜ITO/Ag/ITO(IAI)以及新型復(fù)合膜FTO/Ag/FTO(FAF)、AZO/Ag/AZO(ZAZ)的制備和性能具有特別重要的意義。本文利用直流磁控濺射法,在室溫下玻璃基底上制備了ITO膜、Ag膜、ITO/Ag膜、Ag/ITO膜、ITO/Ag/ITO復(fù)合膜、FTO膜、FTO/Ag/FTO復(fù)合膜、AZO膜、AZO/Ag膜和AZO/Ag/AZO復(fù)合膜。采用掃描電子顯微鏡、原子力顯微鏡、表面輪廓儀、可見光分光光度計和四探針測量儀對薄膜的表面形貌、膜層厚度、光電學(xué)性能等進(jìn)行表征。通過分析ITO和Ag膜的表面形貌、沉積規(guī)律和光電學(xué)性能可知：玻璃基底上沉積ITO膜后表面粗糙度增大,隨著ITO沉積時間的延長,ITO膜沉積速率逐漸增大,透過率逐漸降低,方阻逐漸減��；隨著Ag沉積時間的延長,Ag膜由島狀結(jié)構(gòu)轉(zhuǎn)變?yōu)檫B續(xù)薄膜,沉積速率逐漸減小,透過率逐漸降低,方阻逐漸減小。通過對ITO/Ag/ITO復(fù)合膜的結(jié)構(gòu)特點和光電學(xué)性能分析可知：ITO/Ag/ITO復(fù)合膜的導(dǎo)電性能取決于Ag層,但明顯受到外層ITO膜的影響；IAI復(fù)合膜中ITO(34nm)/Ag(11nm)/ITO(34nm)的光電學(xué)性能最佳,最大可見光透過率為85.97%,方阻為5.46Ω/sq,哈克性能指數(shù)為0.0404Ω-1。通過對FTO膜的組織結(jié)構(gòu)、沉積規(guī)律、光電學(xué)性能分析可知,隨著FTO沉積時間的延長,FTO的結(jié)構(gòu)由均質(zhì)狀轉(zhuǎn)變?yōu)榇蟀麪?沉積速率變化較小,透過率先降低后提高,方阻始終超出四探針測量量程。通過研究FTO/Ag/FTO復(fù)合膜的光電學(xué)性能可知：FAF復(fù)合膜中FTO(50nm)/Ag(11nm)/FTO(50nm)的光電學(xué)性能最好,最大可見光透過率為83.31%,方阻為7.19Ω/sq,哈克性能指數(shù)為0.0224Ω-1。通過對比分析IAI和FAF復(fù)合膜的性能可知：FAF膜的哈克性能指數(shù)低,光電學(xué)性能明顯不如IAI；IAI膜和FAF膜均在Ag膜厚度為11nm時獲得最佳光電學(xué)性能。通過對AZO膜的組織結(jié)構(gòu)、沉積規(guī)律和光電學(xué)性能分析可知：隨著AZO沉積時間延長,AZO膜始終保持小胞狀生長,沉積速率基本不變,透過率逐漸降低,方阻逐漸減小。通過對比ITO、FTO、AZO的特性可知：在沉積速率上,FTO最大,ITO次之,AZO最��；在光學(xué)性能上,AZO膜透過性最佳,ITO膜次之,FTO膜最差；在電學(xué)性能上,ITO膜導(dǎo)電性最佳,AZO膜次之,FTO膜最差。通過鍍制不同Ag層厚度的AZO(25nm)/Ag膜并分析其表面形貌可知：底層AZO上Ag膜的生長過程為島狀結(jié)構(gòu)→島結(jié)構(gòu)聯(lián)合→網(wǎng)狀結(jié)構(gòu)→連續(xù)薄膜,且AZO(25nm)/Ag中Ag膜的臨界厚度與Glass/Ag中基本一致。通過研究AZO/Ag/AZO光電學(xué)性能可知,AZO(27nm)/Ag(9nm)/AZO(27nm)的光電學(xué)性能最佳,最大可見光透過率為86.28%,方阻為4.29Ω/sq,哈克性能指數(shù)為0.0533Ω-1。通過對比分析IAI、FAF、ZAZ三種復(fù)合膜的性能可知,ZAZ的光電學(xué)性能明顯優(yōu)于IAI和FAF,且獲得最優(yōu)性能時中間層Ag膜厚度僅為9nm,底層AZO膜的低表面粗糙度和外層AZO膜的低沉積速率促使Ag膜在更薄厚度下連續(xù)。
[Abstract]:The traditional transparent conductive indium tin oxide (ITO) with low resistance, the range of visible light transmittance and good transparent electrode is widely used for various displays and solar cells. However, the scarcity of resources of In are not only expensive and toxic, reduce or avoid the consumption of In will become the development trend of transparent conductive film. Therefore, ITO can be used as substitute of fluorine doped tin oxide (FTO) and Al Zinc Oxide (AZO) have attracted more and more attention. However, ITO, FTO and AZO transparent conductive oxide (TCO) conductive performance in semi conductor by the conductive mechanism, the conductivity is difficult to achieve further improve. Therefore, TCO has been increasingly unable to meet the higher requirements of the advanced photoelectric device presented on the conductive properties. Therefore, in-depth study of the thickness of the thinner than single-layer TCO sandwich structure composite conductive film, better ITO/Ag/ITO (IAI), a novel composite membrane FTO/ Ag/FTO (FAF), AZO/Ag/AZO (ZAZ) preparation and performance is of great significance. This paper uses the DC magnetron sputtering at room temperature on glass substrate were prepared by ITO membrane, Ag membrane, ITO/Ag membrane, Ag/ITO membrane, ITO/Ag/ITO composite membrane, FTO membrane, FTO/Ag/FTO composite film, AZO film, AZO/Ag film and the AZO/Ag/AZO composite film by scanning electron microscopy, atomic force microscopy, surface profiler, visible light spectrophotometer and four probe measuring instrument of surface morphology, film thickness, optical properties were characterized. The surface morphology analysis of ITO and Ag films, deposition and photoelectric properties shows that: glass the substrate surface roughness of ITO film deposited after the degree increases, with increasing ITO deposition time, deposition rate of ITO film increases, the transmittance decreased, resistance decreased gradually; along with the prolonging of deposition time of Ag, the Ag film changes from the island structure for continuous film, sink The deposition rate decreases and the transmittance decreased, resistance decreased gradually. The structure characteristics of ITO/Ag/ITO composite films and photoelectric properties analysis showed that the ITO/Ag/ITO composite membrane conductivity depends on the Ag layer, but significantly affected by outer membrane ITO; IAI composite membrane ITO (34nm) /Ag (11nm (/ITO) 34nm) photoelectricproperties best, the maximum transmittance of visible light is 85.97%, the square resistance is 5.46 ohms /sq, Huck performance index is 0.0404 ohm -1. through the organizational structure of FTO film deposition, analysis performance of photoelectricity, with FTO deposition time of FTO, the structure changed from homogeneous to large the cellular deposition rate, small changes, through the first decreased and then increased, the square resistance always exceed four probe measurement range. The performance of FTO/Ag/FTO composite membrane by photoelectric research: FAF composite membrane FTO (50nm) /Ag (11nm) /FTO (50nm) of the optical performance of the best, the most High visible light transmittance is 83.31%, the square resistance is 7.19 ohms /sq performance index for the performance of the hack 0.0224 ohm -1. through the comparative analysis of IAI and FAF composite film: FAF film Huck performance index is low, photoelectric properties than IAI; IAI and FAF films in the thickness of Ag is 11nm the best photoelectric properties. The structure of AZO film, deposition and photoelectric properties analysis shows that with the deposition time of AZO prolonged, AZO film has always maintained vesiculate growth, the deposition rate is basically unchanged, the transmittance decreased, resistance decreased gradually. Compared with the ITO, FTO, AZO: the biggest characteristic that in FTO the deposition rate, ITO, AZO, minimum; optical performance, AZO membrane permeability, ITO membrane, FTO membrane is the worst; in the electrical properties of ITO films, the best, AZO membrane, FTO membrane is the worst. By depositing different thickness of Ag layer (AZO 25nm) /Ag film And analyze the surface morphology of the growth process of Ag film on the bottom of AZO island structure, network structure, and island structure combined with continuous thin film, and AZO (25nm) Glass/Ag Ag and the critical thickness of /Ag film in the same school. The performance through the research of AZO/Ag/AZO photoelectric, AZO (27nm) /Ag (9nm) /AZO (27nm) photoelectricproperties best, the maximum transmittance of visible light is 86.28%, the square resistance is 4.29 ohms /sq, Huck performance index is 0.0533 ohm -1. through the comparative analysis of IAI, FAF, the ZAZ performance of three kinds of membranes, ZAZ photoelectric properties are superior to those of IAI and FAF, and obtain the optimal performance the middle layer Ag film thickness is only 9nm, low deposition rate and roughness of the outer AZO film AZO film on the surface of low to a continuous Ag film in thinner thickness.

【學(xué)位授予單位】：山東建筑大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2015
【分類號】：TB383.2

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