本文關(guān)鍵詞： 應(yīng)變鍺 氮化硅 鍺發(fā)光二極管 直接帶隙 間接帶隙　出處：《黑龍江大學(xué)》2015年碩士論文　論文類型：學(xué)位論文

【摘要】：隨著“摩爾定律”的提出,硅基微電子器件的特征尺寸已經(jīng)達(dá)到了物理極限,人們開始為擴(kuò)大硅基微電子技術(shù)而努力。實(shí)際上,硅作為光學(xué)器件集成的平臺(tái)已經(jīng)被廣泛的研究了。然而硅是間接帶隙材料不能作為高效率光源的這一事實(shí),已經(jīng)阻礙了它的發(fā)展。人們開始關(guān)注其他的IV族半導(dǎo)體材料。作為候選材料的鍺雖然也是間接帶隙,但是其直接帶與間接帶之差僅為0.136eV,并且引入張應(yīng)變可以使這一差值進(jìn)一步減小。本文采用等離子體增強(qiáng)化學(xué)氣相沉積法制備出具有高應(yīng)力的氮化硅薄膜。通過氮化硅致應(yīng)變技術(shù)將應(yīng)變引入到鍺薄膜材料中,并將鍺薄膜材料制作成發(fā)光二極管,探究二極管的制作工藝流程,成功地驗(yàn)證了鍺的電致發(fā)光性能,本文為鍺發(fā)光的研究提供了基礎(chǔ)。
[Abstract]:With the advance of "Moore's law", the feature size of silicon microelectronic devices has reached the physical limit, people began to expand the silicon microelectronic technology. In fact, as silicon optical device integration platform has been widely studied. However, silicon is an indirect bandgap material is not as the fact that the high efficiency light source. Has hindered its development. People begin to pay close attention to IV semiconductor materials. As the other candidate materials of germanium though is an indirect band gap, but the direct and indirect band difference is only 0.136eV, and the strain can make such a difference is further reduced. By using plasma enhanced chemical vapor was prepared with silicon nitride thin films of high stress phase deposition of silicon nitride. The strain induced strain technology will be introduced into the germanium thin film material, and germanium thin film material into the light emitting diode, two pole probe The fabrication process of the tube has successfully verified the electroluminescent properties of germanium. This paper provides a basis for the study of germanium luminescence.

【學(xué)位授予單位】：黑龍江大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TB383.2

【參考文獻(xiàn)】

相關(guān)碩士學(xué)位論文 前1條

1 鄧文洪;硅基應(yīng)變材料的性能表征研究[D];西安電子科技大學(xué);2011年

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本文編號(hào)：1460882