本文關(guān)鍵詞： 摻雜 MgZnO納米材料 ZnO納米柱 電化學(xué)沉積　出處：《哈爾濱工業(yè)大學(xué)》2015年碩士論文　論文類型：學(xué)位論文

【摘要】：由于Zn O半導(dǎo)體材料在室溫下具有較高的激子結(jié)合能,良好的壓電性能以及光電性能,Zn O半導(dǎo)體材料在環(huán)境監(jiān)測(cè)、導(dǎo)彈尾焰、太陽(yáng)能電池和液晶顯示器等領(lǐng)域有著廣泛的應(yīng)用前景,逐漸成為研究者研發(fā)的熱點(diǎn)。由于本征Zn O半導(dǎo)體材料的帶隙為3.37e V,因此,基于Zn O材料制備的紫外探測(cè)器只能探測(cè)到某一特定的波長(zhǎng),無(wú)法用于整個(gè)紫外波段的探測(cè)。為了拓寬Zn O基紫外探測(cè)器的探測(cè)波段,本課題采用Mg摻雜的方法,力求對(duì)Zn O半導(dǎo)體材料的禁帶寬度進(jìn)行可控的調(diào)整。世界各國(guó)的研究者已經(jīng)通過(guò)MOCVD、MBE、PLD、磁控濺射等實(shí)驗(yàn)方法成功研制出滿足日盲紫外波段的Mg Zn O納米材料,但是,關(guān)于電化學(xué)法制備高M(jìn)g組分的Mg Zn O納米材料的研究還沒(méi)有相關(guān)報(bào)道。本實(shí)驗(yàn)采用電化學(xué)法制備Mg Zn O納米材料,具體的研究?jī)?nèi)容如下:1.以提拉法在ITO導(dǎo)電襯底上制備出Zn O種子層,采用電化學(xué)法制備Zn O納米柱陣列。研究表明,改變提拉次數(shù),可以提高Zn O納米柱的結(jié)晶度和取向性,使Zn O納米柱垂直于襯底表面。2.通過(guò)加入不同濃度的硝酸鋅和硝酸鎂電解液,研究Mg2+對(duì)于Zn O形貌的影響。當(dāng)電解液中Zn2+濃度較低時(shí),加入適量的Mg2+,可以制備出柱狀結(jié)構(gòu)的Zn O;當(dāng)電解液中Zn2+濃度較高時(shí),加入適量的Mg2+,可以制備出片狀結(jié)構(gòu)的Zn O。3.采用電化學(xué)法,通過(guò)調(diào)節(jié)不同濃度比的硝酸鋅和硝酸鎂電解液,實(shí)現(xiàn)Mg摻雜Zn O,制備出Mg Zn O納米材料。由XRD表明,隨著摻雜含量的升高,Mg Zn O納米材料的(002)衍射峰有輕微的移動(dòng)。當(dāng)硝酸鋅濃度一定時(shí),Mg Zn O納米材料的尺寸,隨著硝酸鎂濃度的升高,先增大后減小,這是由于溶液中的Mg2+、Zn2+、OH-離子的濃度不平衡所致。當(dāng)硝酸鋅電解液為2m M,硝酸鎂為4m M時(shí),制備的Mg Zn O納米材料取向性良好,結(jié)晶度高,尺寸較小,是制備Mg Zn O納米材料的最佳電解液濃度。在此電解液氛圍下,研究了沉積電壓和沉積溫度對(duì)于Mg Zn O的影響。結(jié)果表明,最佳的沉積電位為-1V,最優(yōu)沉積溫度為60℃。
[Abstract]:Due to the high exciton binding energy, good piezoelectric and photoelectric properties of Zno semiconductor material at room temperature, the Zno semiconductor material is monitored in the environment, and the missile tail flame. Solar cells and liquid crystal display (LCD) have been widely used in many fields, and have gradually become the focus of research and development. Because the band gap of intrinsic ZnO semiconductor material is 3.37e V, therefore. The UV detector based on Zno material can only detect a specific wavelength and can not be used to detect the whole ultraviolet band. In order to broaden the detection band of Zn-O based UV detector. In this paper, the Mg-doped method is used to adjust the bandgap of Zn-O semiconductor materials in a controllable way. Researchers in the world have adopted MOCVD / MBEPLD to control the bandgap of Zn-O semiconductor materials. Magnetron sputtering and other experimental methods have been successfully developed to meet the solar blind ultraviolet band mg Zn O nanomaterials, but. The preparation of mg Zn O nanomaterials with high mg composition by electrochemical method has not been reported. In this experiment, mg Zn O nanomaterials were prepared by electrochemical method. The specific research contents are as follows: 1. Zno seed layer was prepared on ITO conductive substrate by Czochralski method, and Zn-O nano-column array was prepared by electrochemical method. The crystallinity and orientation of Zn-O nano-column can be improved by adding different concentration of zinc nitrate and magnesium nitrate electrolyte. The Zn-O nano-column is perpendicular to the substrate surface. The effect of Mg2 on Zn-O morphology was studied. When the concentration of Zn2 in electrolyte was low, the columnar ZnO could be prepared by adding proper amount of Mg2. When the concentration of Zn2 in electrolyte is high, Zn 0.3 with flake structure can be prepared by adding proper amount of Mg2. Zinc nitrate and magnesium nitrate electrolyte with different concentration ratio can be prepared by electrochemical method. Mg Zn O nanomaterials were prepared by doping Zn O with mg. XRD showed that with the increase of doping content, mg Zn O nanomaterials were obtained. When the concentration of zinc nitrate is fixed, the size of mg Zn O nanomaterials increases firstly and then decreases with the increase of magnesium nitrate concentration. This is due to the imbalance of the concentration of Mg2 ~ (2 +) Zn _ (2) O _ (-) ion in the solution, when zinc nitrate electrolyte is 2m M and magnesium nitrate is 4 mm. The prepared mg Zn O nanomaterials have good orientation, high crystallinity and small size, which is the best electrolyte concentration for the preparation of mg Zn O nanomaterials. The effects of deposition voltage and deposition temperature on mg Zn O are studied. The results show that the optimum deposition potential is -1 V and the optimum deposition temperature is 60 鈩，

本文編號(hào)：1455126