本文關(guān)鍵詞： 脈沖磁控濺射 透明導(dǎo)電薄膜 氧化銦錫薄膜　出處：《大連工業(yè)大學(xué)學(xué)報》2017年04期 　論文類型：期刊論文

【摘要】：通過脈沖磁控濺射法在摻氟氧化錫透明導(dǎo)電薄膜(FTO)基底上制備了氧化銦錫(ITO)透明導(dǎo)電薄膜。研究了濺射時間和襯底溫度對FTO基底上制備的ITO薄膜的光透過率和電性能的影響。采用SZT-2四探針測試儀測量樣品表面的電阻,用掃描電鏡(SEM)對樣品進行表征。結(jié)果表明,隨著濺射時間的增加以及襯底溫度的升高,以FTO導(dǎo)電薄膜為基底制備的氧化銦錫(ITO)透明導(dǎo)電膜的電阻逐漸減小,而后基本保持不變。在基片溫度為400℃、濺射時間為45min時,方塊電阻最小值達到1.5Ω。
[Abstract]:Indium tin oxide (ITO) was prepared by pulsed magnetron sputtering on the substrate of transparent conductive thin film (FTO) doped with tin oxide. Transparent conductive thin films. The effects of sputtering time and substrate temperature on the optical transmittance and electrical properties of ITO films prepared on FTO substrates were investigated. The surface resistance of the samples was measured by SZT-2 four-probe tester. The samples were characterized by scanning electron microscopy (SEM). The results show that the substrate temperature increases with the increase of sputtering time. The resistance of indium tin oxide (ITO) transparent conductive films prepared on FTO thin films decreased gradually, and then remained unchanged. The substrate temperature was 400 鈩，

本文編號：1442420