本文關(guān)鍵詞：磁控濺射法制備AZO透明導(dǎo)電薄膜及其性能的研究　出處：《上海工程技術(shù)大學(xué)》2015年碩士論文　論文類型：學(xué)位論文

  更多相關(guān)文章： 磁控濺射 次級磁場 透明導(dǎo)電薄膜 AZO 光電性能

【摘要】：透明導(dǎo)電氧化物(TCO)薄膜是廣泛應(yīng)用于太陽能電池、平板顯示器和傳感器等領(lǐng)域的一類薄膜材料,其在可見光波長范圍內(nèi)的平均透過率超過80%,電阻率一般在10-3 Ω·cm以下。錫摻雜氧化銦(ITO)薄膜因為其優(yōu)異的光電性能是目前應(yīng)用最為廣泛的TCO材料。但是,銦資源的嚴(yán)重短缺造成的高成本以及銦元素具有毒性,使得尋找一種廉價無毒且性能足以媲美ITO的新型透明導(dǎo)電薄膜來替代ITO薄膜勢在必行。和傳統(tǒng)ITO相比,鋁摻雜氧化鋅(AZO)薄膜具有資源豐富、廉價無毒、化學(xué)和熱穩(wěn)定性能良好等優(yōu)勢,被認為是替代ITO薄膜的最佳候選材料。本文利用射頻磁控濺射法(RFMS),在普通載波片上制備了AZO透明導(dǎo)電薄膜。利用X射線衍射儀(XRD)、掃描電子顯微鏡(SEM)、原子力顯微鏡(AFM)、四探針測試儀和紫外-可見分光光度計研究了濺射功率、濺射氣壓、基底偏壓和次級磁場對AZO薄膜表面形貌、粗糙度、晶體結(jié)構(gòu)以及光電性能的影響。實驗結(jié)果表明：1.制備的AZO薄膜呈六角纖鋅礦結(jié)構(gòu),晶粒沿(002)晶面定向生長。薄膜的晶粒尺寸、表面粗糙度以及(002)面衍射峰強度隨著濺射功率的增加逐漸增大。濺射功率較低時,薄膜的生長模式為層狀模式,而濺射功率較高時,薄膜的生長模式為島狀模式。薄膜電阻隨著濺射功率的增加而減小,濺射功率為150 W時,薄膜的方阻降至30 Ω/□。濺射功率較小時薄膜具有較高的可見光透過率,薄膜的光學(xué)帶隙寬度隨著濺射功率的提高緩慢增加；2.濺射氣壓較小時,薄膜晶粒尺寸很小,但大小均勻,隨著氣壓的增加,晶粒尺寸逐漸增大,表面粗糙度先增大后減小。濺射氣壓不超過2.0 Pa時,(002)晶面衍射峰的強度隨著濺射氣壓的增加而增強,說明增大濺射氣壓可以加快晶粒的生長速度。濺射氣壓過高會導(dǎo)致薄膜的晶體結(jié)構(gòu)變差,減緩薄膜的生長的速度。濺射氣壓為0.5 Pa和2.0 Pa時,薄膜具有較高的可見光透過率,其大小受到薄膜厚度、結(jié)晶度以及表面形貌等因素的綜合影響。濺射氣壓為2.0 Pa時,AZO薄膜具有最小的方阻,大小為26.59Ω/□,3.施加偏壓后,薄膜表面晶粒呈現(xiàn)無定形狀(破碎狀),但是晶粒大小均勻,結(jié)合更為致密,表面無異常大的顆粒形成。晶粒尺寸隨基底偏壓的升高緩慢增大,表面粗糙度隨之增加,薄膜表面呈現(xiàn)更為明顯的金字塔結(jié)構(gòu)。濺射偏壓沒有改變的晶粒生長的擇優(yōu)取向性,但加快了薄膜中其它晶面的生長速度。施加偏壓后,薄膜具有很好的可見光透過性,平均透過率超過86%。過高的偏壓會起到反濺的作用,對薄膜的生長有不利的影響。4.在傳統(tǒng)濺射系統(tǒng)中外加一個次級磁場,引入次級磁場后薄膜的沉積速率從原先的13.04 nm/min提高到了19.93 nm/min:施加次級磁場后薄膜表面平整致密、顆粒大小均勻,結(jié)晶質(zhì)量較高,而不加磁場薄膜表面形貌呈蠕蟲狀,薄膜質(zhì)量較差。濺射時間為90 min時,外加磁場前后AZO薄膜方阻分別為30.74Ω/□和12.88Ω/□。次級磁場對薄膜可見光透過率影響不大,但使薄膜的吸收邊藍移現(xiàn)象更明顯。運用ANSYS軟件對磁控濺射二維磁場分布模擬后發(fā)現(xiàn),次級磁場提高了靶上方橫向磁場強度,改善了磁場分布的均勻性,加強了磁場對電子的磁控作用,提高了靶電流,是AZO薄膜的濺射速率、光電性能和形貌結(jié)構(gòu)得到提高和優(yōu)化的原因。
[Abstract]:Transparent conductive oxide (TCO) thin film is widely used in solar cell, a kind of thin film materials in the field of flat-panel display and sensor, the average in the visible wavelength range through the rate of more than 80%, the resistivity is usually in the 10-3. Cm. Tin doped indium oxide (ITO) thin film because of its excellent photoelectric performance is the most widely used TCO materials. However, a serious shortage of resources caused by the high cost of indium and indium is toxic, and made the new transparent conductive film to find a cheap and non-toxic performance comparable to the ITO to replace the ITO thin film is imperative. Compared with the traditional ITO, Zinc Oxide (AZO) aluminum doped thin films with abundant resources cheap, non-toxic, good chemical and thermal stability and other advantages, is considered to be the best candidate material to replace ITO films. By using RF magnetron sputtering (RFMS), in the common carrier wave plate on the preparation of AZO The transparent conductive film. By using X ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), four probe tester and UV VIS spectrophotometer on the sputtering power, sputtering pressure, substrate bias and secondary magnetic field on the surface morphology of AZO film roughness, crystal structure and the effect of photoelectric properties. The experimental results show that the AZO film 1. prepared at six corners wurtzite structure, grain along the (002) crystal plane orientation growth. The grain size of the films, the surface roughness and the (002) plane diffraction peak intensity gradually increases with the increase of sputtering power. The sputtering power is lower. The film growth mode for layered model, and the sputtering power is high, the film growth mode for the island mode. The thin film resistor decreases with the increase of sputtering power, sputtering power is 150 W, the square resistance film is reduced to 30 / - hour film with the sputtering power was. High visible light transmittance, optical band gap width increases slowly with the increasing of sputtering power; 2. sputtering pressure is lower, the grain size of the films is very small, but the size of uniform, as the pressure increases, the grain size increases, the surface roughness increases first and then decreases. The sputtering pressure (less than 2 Pa. 002) diffraction peak intensity increased with the increase of sputtering pressure, sputtering pressure that can speed up the growth rate of grain. The sputtering pressure is too high will lead to the crystal structure of the films become poor, slow the growth of the film speed. The sputtering pressure of 0.5 Pa and 2 Pa, the film has high visible light transmittance its size is rate, film thickness, surface morphology and crystallinity of the comprehensive influence factors. The sputtering pressure is 2 Pa, AZO thin film has the least resistance, the size is 26.59 ohms per square 3. bias is applied, the surface crystal film The particle shows amorphous shape (broken), but the grain size is uniform, with more compact surface, no abnormal large particle formation. The grain size increases with the substrate bias voltage increases slowly, the surface roughness increases, the film surface is more obvious. The structure of Pyramid preferred orientation growth of grain sputtering without bias change, but to speed up the growth of other planes speed films. Bias is applied after the film has good visible light transmittance and average transmittance of more than 86%. high voltage will play the role of anti splash, the growth of the film has an adverse effect on the traditional.4. sputtering system plus a secondary magnetic field. After the introduction of the secondary magnetic field of thin film deposition rate from 13.04 nm/min increased to 19.93 nm/min: in a secondary magnetic field smooth surface film is dense, uniform particle size, high crystal quality, without magnetic thin film The surface morphology of the wormlike, thin film of poor quality. The sputtering time of 90 min, the magnetic field of AZO films before and after resistance were 30.74 - and 12.88 / Omega / Omega. - secondary magnetic field on film visible light through rate has little effect, but the blue shift of the absorption edge of thin film phenomenon is more obvious. The use of ANSYS software for magnetron the sputtering of two-dimensional magnetic field distribution simulation showed that the secondary magnetic field of the target is increased above the transverse magnetic field strength, improve the uniformity of magnetic field, strengthen the effect of magnetic field on the magnetron electronic, improve the target current, is the sputtering rate of AZO film, the reason to improve and optimize the photoelectric properties and morphology.

【學(xué)位授予單位】：上海工程技術(shù)大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2015
【分類號】：TB383.2

【參考文獻】

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本文編號：1423298