本文關(guān)鍵詞：金屬催化化學(xué)腐蝕法制備硅納米線的研究　出處：《鄭州大學(xué)》2015年碩士論文　論文類型：學(xué)位論文

  更多相關(guān)文章： 金屬催化化學(xué)刻蝕法 硅納米線 電子顯微鏡 光致發(fā)光

【摘要】：隨著電子信息時代的到來,與傳統(tǒng)電子技術(shù)相比,以集成電路為基礎(chǔ)的微電子技術(shù)實現(xiàn)了器件與電路的微小型化而逐漸成為當(dāng)今信息產(chǎn)業(yè)的基石。但是,隨著研究的進展,研究者們發(fā)現(xiàn)由于受經(jīng)典物理學(xué)理論的限制,使得依靠傳統(tǒng)微電子技術(shù)來減小電子器件尺寸越來越難,但摩爾定律使得科學(xué)工作者們可以在工藝與電子器件發(fā)展之間的矛盾中尋求新的工藝手段和材料,而一維半導(dǎo)體材料因其顯著特性引起了學(xué)者們的廣泛關(guān)注。硅納米線因在兩個維度上都達(dá)到納米尺寸且在光學(xué)、光電子學(xué)領(lǐng)域都有巨大應(yīng)用潛力而成為引起廣泛研究的一維半導(dǎo)體材料。而其中對硅納米線的制備技術(shù)的研究則是研究硅納米線性能的基礎(chǔ)。本文采用金屬催化化學(xué)腐蝕法制備硅納米線,這種方法制備過程簡單且成本低廉。并且在實驗過程中通過改變一次腐蝕的腐蝕液濃度、腐蝕時間、腐蝕溫度及改變二次刻蝕時間來比較這些因素對制備的硅納米線的表面形貌的影響。實驗發(fā)現(xiàn)在刻蝕過程中刻蝕時間對樣品形貌影響巨大,刻蝕時間短樣品無法生成硅納米線,而刻蝕時間過長時則會導(dǎo)致硅片被刻蝕透,最后溶解在刻蝕液中。而本文嘗試通過其他實驗方法制備硅納米線比如通過二次刻蝕前對樣品進行退火處理來改善硅納米線的形貌和光致發(fā)光特性。在其他實驗中生成有網(wǎng)格狀樣品,刻蝕時間延長網(wǎng)格狀結(jié)構(gòu)逐漸消失,但是其具體行成機制及消失原因尚待研究。研究發(fā)現(xiàn)實驗中制備的硅納米線的生長方向只受表面銀層的影響,且形成中間銀層兩端硅納米線的特殊形貌。
[Abstract]:With the advent of electronic information age, compared with the traditional electronic technology, microelectronic technology with integrated circuit based on the realization of miniaturization of device and circuit and gradually become the cornerstone of today's information industry. However, with the progress of the study, the researchers found that due to the limitation of classical physics theory, which rely on traditional microelectronics technology to reduce the size of electronic devices is more and more difficult, seek new technology and material contradiction but Moore's law makes scientists in between the development process and electronic devices, and one-dimensional semiconductor material due to its excellent properties have attracted wide attention. Silicon nanowires due to nano size in two dimensions and in optics, optoelectronics fields have great application potential as one-dimensional semiconductor materials widely studied. One of the silicon nanowire preparation technology The study is based on the properties of SiNWs. The preparation of silicon nanowires by metal catalyzed chemical etching method, this method has the advantages of simple preparation process and low cost. And by changing a corrosion solution concentration, during the experiment of corrosion time, corrosion temperature and etching time two times change in surface topography to comparison of these factors on the preparation of silicon nanowires. The experimental results showed that the etching time in the etching process is a huge impact on the morphology of the samples, the etching time of short sample cannot generate silicon nanowires, and the etching time will lead to the silicon wafer is etched through, finally dissolved in the etching solution. And this paper attempts by other experiments preparation method of silicon nanowires by two etching samples before annealing to improve the morphology of silicon nanowires and photoluminescence properties. In other experiments to generate a grid sample, The etching time prolongs, and the grid structure gradually disappears. However, the specific mechanism and the reason for its disappearance remain to be studied. It is found that the growth direction of the prepared silicon nanowires is only affected by the surface silver layer, and the special morphology of the silicon nanowires at the ends of the intermediate Silver layer is formed.

【學(xué)位授予單位】：鄭州大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2015
【分類號】：TB383.1;O613.72

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