非密堆積碳反蛋白石的制備研究
發(fā)布時間:2018-01-05 15:34
本文關(guān)鍵詞:非密堆積碳反蛋白石的制備研究 出處:《化工新型材料》2017年08期 論文類型:期刊論文
更多相關(guān)文章: 膠體晶體 碳反蛋白石 自組裝 化學氣相沉積
【摘要】:膠體晶體模板法制備的反蛋白石(IO)通常為密堆積結(jié)構(gòu),而非密堆積的IO可以具有更可控的孔道結(jié)構(gòu)及更寬的光子能帶隙,具有重要的意義。通過對密堆積的SiO_2 IO進行化學氣相沉積(CVD)法填充,制備非密堆積的IO,并以其為模板通過碳的CVD及SiO_2的刻蝕,制備非密堆積碳IO。其結(jié)構(gòu)為通過管道相互連通的空心碳球陣列,其中空心球及管道直徑隨著SiO_2 CVD沉積層厚度的增大而減小,管道長度隨著SiO_2 CVD沉積層厚度的增大而增大,制備方法具有較好的可控性。該材料在染料敏化太陽能電池、傳感器和催化等領(lǐng)域具有較好的潛在應(yīng)用前景。
[Abstract]:The inverse opal IOs prepared by colloidal crystal template method are usually dense stacked structure, while the non dense stacked IO can have more controllable pore structure and wider photonic band gap. SiO_2 IO was filled with chemical vapor deposition (CVD) method to prepare unpacked IO. The non-dense stacked carbon IOs were prepared by etching carbon CVD and SiO_2. The structure of the IOs was a hollow carbon sphere array connected to each other through pipes. The diameter of hollow sphere and pipe decreases with the increase of SiO_2 CVD deposit thickness, and the length of pipeline increases with the increase of SiO_2 CVD deposit thickness. The preparation method has good controllability, and the material has a good potential application in dye sensitized solar cells, sensors and catalysis.
【作者單位】: 江南大學化學與材料工程學院江南大學食品膠體與生物技術(shù)教育部重點實驗室;
【基金】:國家自然科學基金(51302109) 江蘇省自然科學基金(BK20130144)
【分類號】:TB383.4
【正文快照】: 反蛋白石(IO)是以單分散微球自組裝形成的膠體晶體(CC)為模板,制備的具有均勻孔道結(jié)構(gòu)的大孔材料[1]。其結(jié)構(gòu)可以通過對模板微球粒徑、排列方式、微球間連接面積的改變而靈活控制,因而受到了廣泛的關(guān)注。SiO2[2]、TiO2[3]、ZnO[4]等IO通常以CC為模板通過溶膠-凝膠填充法或者化,
本文編號:1383752
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