發(fā)布時(shí)間：2018-01-05 10:34

  本文關(guān)鍵詞：離子源輔助高功率脈沖磁控濺射制備N摻雜p型ZnO薄膜　出處：《北京印刷學(xué)院》2015年碩士論文　論文類型：學(xué)位論文

  更多相關(guān)文章： 高功率脈沖磁控濺射(HIPIMS) 氮摻p-type氧化鋅薄膜(p-ZnO:N)薄膜 感應(yīng)耦合等離子體輔助 高氮摻濃度

【摘要】：氧化鋅(Zn O)為寬禁帶(3.37 e V)半導(dǎo)體材料,可以通過摻雜實(shí)現(xiàn)半導(dǎo)體到導(dǎo)體的電性變化,可用于制備透明導(dǎo)電薄膜和半導(dǎo)體薄膜。更為重要的是Zn O具有高達(dá)60me V的激子束縛能,理論上可以在室溫(26 me V)乃至更高溫度下實(shí)現(xiàn)紫外激子發(fā)光。但由于寬禁帶半導(dǎo)體材料摻雜的非對稱性現(xiàn)象,使得Zn O材料的p型制備十分困難,限制了其在光電設(shè)備上應(yīng)用。雖然已經(jīng)有很多實(shí)驗(yàn)組報(bào)道制備出較好性能的p-Zn O,但離實(shí)際應(yīng)用的要求還是相差甚遠(yuǎn),很難做到高空穴濃度、高載流子遷移率、性能穩(wěn)定又重復(fù)性良好的樣品,主要原因是:(1)摻雜濃度低,受主缺陷濃度不高,并且受主能級較深,不易解離活化成為有效的受主;(2)Zn O中本征缺陷對摻雜的補(bǔ)償作用明顯,摻雜后還存在自補(bǔ)償現(xiàn)象;(3)p-type摻雜的穩(wěn)定性和重復(fù)性不好。針對摻雜濃度低,本論文采用離子源輔助高功率脈沖磁控濺射(Hi PIMS)技術(shù),以氮?dú)鉃榈?進(jìn)行N摻p-type氧化鋅制備與性能的實(shí)驗(yàn)研究。論文獲得如下結(jié)論:(1)利用Hi PIMS的高能量密度,提高N~+與Zn~+的反應(yīng)活性,有利于提高N的摻雜濃度;(2)采用感應(yīng)耦合等離子體源(ICP)輔助,增加摻雜N_2解離度,獲得高比例N+/N_(2+)比,提供高濃度的活性N原子等離子體;(3)ICP輔助Hi PIMS可以制備p-ZnO薄膜。
[Abstract]:Zinc oxide (ZnO) is a wide band gap (3.37e V) semiconductor material, which can change the electrical properties of semiconductor to conductor by doping. It can be used to prepare transparent conductive film and semiconductor film. More importantly, Zno has exciton binding energy up to 60 EV. The ultraviolet exciton emission can be realized theoretically at room temperature (26me V) or higher temperature, but due to the asymmetry phenomenon of wide band gap semiconductor material doping. It is very difficult to prepare Zno material with p-type, which limits its application in optoelectronic equipment. Although many experimental groups have reported the preparation of p-Zn O with better performance. However, the requirements of practical applications are still far from the requirements, it is difficult to achieve high-altitude hole concentration, high carrier mobility, stable and reproducible samples, the main reason is the low doping concentration. The acceptor defect concentration is not high, and the acceptor energy level is deep, so it is difficult to dissociate and activate to become an effective acceptor. The intrinsic defects in Zn-O have obvious compensation effect on doping, and there is self-compensation phenomenon after doping. The stability and repeatability of p-type doping is not good. Aiming at the low doping concentration, the ion-source assisted high-power pulsed magnetron sputtering (Hi-PIMS) technique with nitrogen as the nitrogen source is used in this paper. The preparation and properties of p-type zinc oxide doped with N were studied. The following conclusions were obtained: 1) the high energy density of Hi PIMS was used to improve the activity of N- and Zn-. It is beneficial to increase the concentration of N doping. (2) Inductively coupled plasma source (ICP) is used to increase the dissociation degree of doped Ns _ 2 and to obtain a high ratio of N / N _ 2) to provide a high concentration of active N atom plasma. The p-ZnO thin films can be prepared by ICP-assisted Hi PIMS.
【學(xué)位授予單位】：北京印刷學(xué)院
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2015
【分類號】：TQ132.41;TB383.2

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本文編號：1382749