本文關(guān)鍵詞：N型納米金剛石微結(jié)構(gòu)的制備及其在S波段微波場(chǎng)發(fā)射性能研究　出處：《西南科技大學(xué)》2015年碩士論文　論文類型：學(xué)位論文

  更多相關(guān)文章： N型納米金剛石 表面微結(jié)構(gòu)化 場(chǎng)發(fā)射陰極 S波段微波場(chǎng)

【摘要】：隨著真空微電子、高功率微波、太赫茲技術(shù)的快速發(fā)展,現(xiàn)有的熱陰極和光陰極難以滿足射頻電子槍對(duì)電子束源的要求,發(fā)展具有優(yōu)異電子束發(fā)射特性和品質(zhì)的冷陰極材料已成為當(dāng)前的研究熱點(diǎn)。本論文以微波等離子體化學(xué)氣相沉積法制備的摻氮N型納米金剛石(N-NCD)薄膜為研究對(duì)象,通過磁控濺射在薄膜表面沉積金屬Ni納米膜,進(jìn)一步加熱Ni納米膜去潤濕后原位形成金屬Ni納米顆粒,以此為掩膜板采用Ar/O2等離子體刻蝕技術(shù),實(shí)現(xiàn)了納米金剛石薄膜的表面微結(jié)構(gòu)化。通過掃描電子顯微鏡(SEM)、原子力顯微鏡(AFM)、Raman光譜等測(cè)試技術(shù)詳細(xì)研究Ni納米膜沉積工藝、Ni納米膜熱退火工藝以及Ar/O2等離子體刻蝕工藝參數(shù)對(duì)N-NCD薄膜微結(jié)構(gòu)化的影響。最后,以所制備的N-NCD微結(jié)構(gòu)為陰極,在S波段微波脈沖電場(chǎng)的激勵(lì)下,測(cè)試并比較了Ar/O2等離子體表面微結(jié)構(gòu)化處理對(duì)其微波場(chǎng)場(chǎng)致電子發(fā)射性能的影響。實(shí)驗(yàn)結(jié)果表明:(1)金屬Ni納米顆粒的密度大小、分布均勻程度與磁控濺射鍍Ni膜厚度和熱退火處理時(shí)間緊密相關(guān)。當(dāng)濺射Ni膜厚度為6nm,熱退火時(shí)間超過20min后,在N-NCD薄膜表面所形成的Ni納米金屬球密度最高、分布均勻性最好;(2)在等離子體刻蝕過程中,加入一定比例的Ar可以增加等離子體對(duì)金剛石膜的刻蝕程度。當(dāng)Ar濃度為45%時(shí),等離子體刻蝕能夠形成具有一定刻蝕深度、分布均勻、一致性高的多孔狀微結(jié)構(gòu);(3)表面微結(jié)構(gòu)化處理有助于提高N型納米金剛石薄膜陰極的S波段微波場(chǎng)場(chǎng)發(fā)射電流密度,在72.1 MV/m的微波梯度場(chǎng)下,發(fā)射電流密度增加量為41%左右。
[Abstract]:Along with the development of vacuum microelectronics, high power microwave, the rapid development of terahertz technology, the existing hot cathode and the photocathode RF gun is difficult to meet the requirements of electron beam source, the development of excellent electron beam emission characteristics and quality of cold cathode materials has become a research hotspot. In this paper, microwave plasma chemical vapor deposition of nitrogen doped N type nanocrystalline diamond (N-NCD) thin films prepared by magnetron sputtering as the research object, in the deposition of thin film surface metal Ni nano membrane, further heating of Ni nano film dewetting after in situ formation of metallic Ni nanoparticles as a mask by Ar/O2 plasma etching technology, the surface of nano diamond thin films by micro structured. Scanning electron microscopy (SEM), atomic force microscopy (AFM), Ni nano film deposition process with test technology of Raman spectra, Ni nano film thermal annealing process and Ar Effect of /O2 on plasma etching parameters on N-NCD thin film micro structure. Finally, the prepared N-NCD micro structure as cathode in S band microwave excitation pulse electric field under test and compare the Ar/O2 plasma surface micro structured processing affect the electron emission properties of the microwave field. The experimental results show that: (1) the size of metal Ni nano particles, and the degree of uniformity of magnetron sputtering Ni film thickness and annealing time are closely related. When the sputtering Ni film thickness is 6nm, annealing time is over 20min, on the surface of N-NCD film formed by Ni nano metal ball the highest density distribution was better (2); in the plasma etching process, adding a certain proportion of Ar can increase the degree of plasma etching on diamond film plasma. When the concentration of Ar was 45%, the plasma etching is capable of forming the etching depth, uniform distribution, The porous microstructure with high consistency. (3) surface microstructural treatment helps to improve the S band microwave field emission current density of N type nano diamond film cathode, and the emission current density increases by 41% at 72.1 MV/m microwave gradient field.

【學(xué)位授予單位】：西南科技大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TQ163;TB383.1

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本文編號(hào)：1380782