本文關鍵詞：N型納米金剛石微結構的制備及其在S波段微波場發(fā)射性能研究　出處：《西南科技大學》2015年碩士論文　論文類型：學位論文

  更多相關文章： N型納米金剛石 表面微結構化 場發(fā)射陰極 S波段微波場

【摘要】：隨著真空微電子、高功率微波、太赫茲技術的快速發(fā)展,現(xiàn)有的熱陰極和光陰極難以滿足射頻電子槍對電子束源的要求,發(fā)展具有優(yōu)異電子束發(fā)射特性和品質的冷陰極材料已成為當前的研究熱點。本論文以微波等離子體化學氣相沉積法制備的摻氮N型納米金剛石(N-NCD)薄膜為研究對象,通過磁控濺射在薄膜表面沉積金屬Ni納米膜,進一步加熱Ni納米膜去潤濕后原位形成金屬Ni納米顆粒,以此為掩膜板采用Ar/O2等離子體刻蝕技術,實現(xiàn)了納米金剛石薄膜的表面微結構化。通過掃描電子顯微鏡(SEM)、原子力顯微鏡(AFM)、Raman光譜等測試技術詳細研究Ni納米膜沉積工藝、Ni納米膜熱退火工藝以及Ar/O2等離子體刻蝕工藝參數(shù)對N-NCD薄膜微結構化的影響。最后,以所制備的N-NCD微結構為陰極,在S波段微波脈沖電場的激勵下,測試并比較了Ar/O2等離子體表面微結構化處理對其微波場場致電子發(fā)射性能的影響。實驗結果表明:(1)金屬Ni納米顆粒的密度大小、分布均勻程度與磁控濺射鍍Ni膜厚度和熱退火處理時間緊密相關。當濺射Ni膜厚度為6nm,熱退火時間超過20min后,在N-NCD薄膜表面所形成的Ni納米金屬球密度最高、分布均勻性最好;(2)在等離子體刻蝕過程中,加入一定比例的Ar可以增加等離子體對金剛石膜的刻蝕程度。當Ar濃度為45%時,等離子體刻蝕能夠形成具有一定刻蝕深度、分布均勻、一致性高的多孔狀微結構;(3)表面微結構化處理有助于提高N型納米金剛石薄膜陰極的S波段微波場場發(fā)射電流密度,在72.1 MV/m的微波梯度場下,發(fā)射電流密度增加量為41%左右。
[Abstract]:Along with the development of vacuum microelectronics, high power microwave, the rapid development of terahertz technology, the existing hot cathode and the photocathode RF gun is difficult to meet the requirements of electron beam source, the development of excellent electron beam emission characteristics and quality of cold cathode materials has become a research hotspot. In this paper, microwave plasma chemical vapor deposition of nitrogen doped N type nanocrystalline diamond (N-NCD) thin films prepared by magnetron sputtering as the research object, in the deposition of thin film surface metal Ni nano membrane, further heating of Ni nano film dewetting after in situ formation of metallic Ni nanoparticles as a mask by Ar/O2 plasma etching technology, the surface of nano diamond thin films by micro structured. Scanning electron microscopy (SEM), atomic force microscopy (AFM), Ni nano film deposition process with test technology of Raman spectra, Ni nano film thermal annealing process and Ar Effect of /O2 on plasma etching parameters on N-NCD thin film micro structure. Finally, the prepared N-NCD micro structure as cathode in S band microwave excitation pulse electric field under test and compare the Ar/O2 plasma surface micro structured processing affect the electron emission properties of the microwave field. The experimental results show that: (1) the size of metal Ni nano particles, and the degree of uniformity of magnetron sputtering Ni film thickness and annealing time are closely related. When the sputtering Ni film thickness is 6nm, annealing time is over 20min, on the surface of N-NCD film formed by Ni nano metal ball the highest density distribution was better (2); in the plasma etching process, adding a certain proportion of Ar can increase the degree of plasma etching on diamond film plasma. When the concentration of Ar was 45%, the plasma etching is capable of forming the etching depth, uniform distribution, The porous microstructure with high consistency. (3) surface microstructural treatment helps to improve the S band microwave field emission current density of N type nano diamond film cathode, and the emission current density increases by 41% at 72.1 MV/m microwave gradient field.

【學位授予單位】：西南科技大學
【學位級別】：碩士
【學位授予年份】：2015
【分類號】：TQ163;TB383.1

【參考文獻】

相關期刊論文 前3條

1 張仿清，，張文軍，胡博，謝二慶，陳光華;硼摻雜及未摻雜金剛石薄膜的電學和光電導特性[J];半導體學報;1995年10期

2 張興旺,嚴輝,鄒云娟,陳光華;金剛石N型摻雜的現(xiàn)狀和問題[J];材料導報;1997年04期

3 劉列,李立民,文建春,萬紅;碳纖維陰極的電子發(fā)射機制(英文)[J];強激光與粒子束;2005年08期

本文編號：1380782