本文關(guān)鍵詞：梯度AZO薄膜的制備及其性能的研究　出處：《遼寧工業(yè)大學(xué)》2017年碩士論文　論文類(lèi)型：學(xué)位論文

  更多相關(guān)文章： 梯度AZO薄膜 沉積溫度 鋁濃度梯度 退火處理 鈍化層

【摘要】：在當(dāng)前的光伏市場(chǎng)中,晶體硅太陽(yáng)電池仍起著關(guān)鍵性的作用,為了提高光電轉(zhuǎn)換效率,其表面鈍化是必不可少的。本文結(jié)合Al2O3和AZO薄膜的優(yōu)點(diǎn),設(shè)計(jì)了一種梯度AZO薄膜,薄膜中鋁濃度從表面到晶硅界面處呈現(xiàn)梯度變化,界面處高的鋁濃度有助于硅襯底鈍化,表面處較低的鋁濃度可以改善光電性能。本文采用原子層沉積法(ALD)制備梯度AZO薄膜,通過(guò)X射線衍射儀(XRD)、X射線光電子能譜儀(XPS)、原子力顯微鏡(AFM)、霍爾效應(yīng)測(cè)試儀、紫外可見(jiàn)分光光度計(jì)、準(zhǔn)穩(wěn)態(tài)光電導(dǎo)衰減法(QSSPC)等對(duì)薄膜的晶體結(jié)構(gòu)、表面形貌、電學(xué)、光學(xué)以及鈍化性能進(jìn)行表征和分析。探究工藝條件對(duì)梯度AZO薄膜性能的影響,結(jié)果表明,所有的梯度AZO薄膜均具有良好的六方纖鋅礦結(jié)構(gòu)。沉積溫度對(duì)薄膜的取向、晶粒尺寸、結(jié)晶度等均具有影響,從而較大的影響了薄膜的光電性能,而對(duì)其鈍化性能的影響相對(duì)較小。隨著沉積溫度的升高,薄膜的結(jié)晶質(zhì)量先增加后減小,電阻率先減小后增大。所有梯度AZO薄膜的可見(jiàn)光區(qū)平均透射率均大于80%。當(dāng)沉積溫度為150℃時(shí),薄膜具有最優(yōu)的鈍化性能。探究鋁濃度梯度對(duì)梯度AZO薄膜性能的影響,結(jié)果表明,鋁濃度梯度對(duì)薄膜的光電及鈍化性能均有較大的影響。隨著鋁濃度梯度的增加,薄膜的結(jié)晶質(zhì)量變差,表現(xiàn)出非晶趨勢(shì),這造成薄膜的電學(xué)性能隨之惡化。所有梯度AZO薄膜在可見(jiàn)光區(qū)的平均透過(guò)率超過(guò)80%,除此之外,沉積態(tài)的梯度AZO薄膜均起到了一定的鈍化效果。探究退火工藝對(duì)梯度AZO薄膜鈍化p型硅表面的影響,結(jié)果表明,退火對(duì)鈍化性能有著顯著的影響。鋁濃度梯度為0.71%/nm的梯度AZO薄膜,少子壽命最高為120.6μs,與沉積態(tài)13.2μs相比提高了約9.2倍。當(dāng)對(duì)退火溫度進(jìn)行優(yōu)化后,梯度AZO薄膜的鈍化效果又有了較大的提升。退火溫度為500℃時(shí),少子壽命提高到135.7μs。表面復(fù)合速率為191.3cm/s,與裸體硅片(5854.8cm/s)相比,降低了一個(gè)數(shù)量級(jí)。梯度AZO薄膜不僅具有良好的光電性能,同時(shí)還起到良好的表面鈍化效果。因此,梯度AZO薄膜作為晶體硅太陽(yáng)電池表面鈍化層,具有很大的應(yīng)用前景。
[Abstract]:In the current photovoltaic market, crystalline silicon solar cells still play a key role, in order to improve the photoelectric conversion efficiency, its surface passivation is essential. This paper combines the advantages of Al2O3 and AZO thin films. A gradient AZO thin film was designed, in which the concentration of aluminum changed from the surface to the interface of crystal silicon, and the high concentration of aluminum at the interface was helpful to passivation of silicon substrate. Low aluminum concentration on the surface can improve the photoelectric properties. In this paper, gradient AZO thin films were prepared by atomic layer deposition (ALD), and X-ray diffractometer (XRD) was used. X-ray photoelectron spectrometer (XPS), atomic force microscope (AFM), Hall effect tester, UV-Vis spectrophotometer. The crystal structure, surface morphology, electrical, optical and passivation properties of the films were characterized and analyzed by quasi-steady photoconductivity attenuation method. The effects of process conditions on the properties of gradient AZO films were investigated. The results show that all gradient AZO films have good hexagonal wurtzite structure, and the deposition temperature has an effect on the orientation, grain size and crystallinity of the films. Thus, the photoelectric properties of the films are greatly affected, but the passivation performance is relatively small. With the increase of deposition temperature, the crystallization quality of the films increases first and then decreases. The resistance decreases first and then increases. The average transmittance in the visible region of all gradient AZO films is greater than 80. The deposition temperature is 150 鈩，

本文編號(hào)：1376405