本文選題：渦流二極管 + 渦腔　； 參考：《核技術(shù)》2015年01期

【摘要】：為了探討渦流二極管渦腔倒角對其流動性能的影響規(guī)律,利用計(jì)算流體力學(xué)方法(Computational Fluid Dynamics,CFD)對4種具有不同高度渦腔倒角的渦流二極管進(jìn)行了正反向流動的數(shù)值模擬,正向流動采用標(biāo)準(zhǔn)k-ε湍流模型,反向流動采用RNG(Renormalization Group)k-ε湍流模型。結(jié)果表明,相較于標(biāo)準(zhǔn)結(jié)構(gòu),其余三種高度的渦腔倒角在較高雷諾數(shù)下都可以降低正向流動阻力,但同時也會降低反向流動阻力。其中,高度為3/4渦腔高度的倒角結(jié)構(gòu),可以最大程度地降低正向流動阻力,同時對反向流動阻力的影響最小,對渦流二極管性能的提高效果最為顯著。數(shù)值模擬所得結(jié)論可為渦流二極管的優(yōu)化設(shè)計(jì)提供參考依據(jù)。
[Abstract]:In order to investigate the effect of vortex cavity chamfering on the flow performance of eddy diodes, four kinds of vortex diodes with different height chamfering were numerically simulated by computational fluid dynamics (CFD). The standard k- 蔚 turbulence model is used for forward flow and RNG (renormalization Group) k- 蔚 turbulence model for reverse flow. The results show that compared with the standard structure, the chamfer of the other three kinds of height can reduce the forward flow resistance at higher Reynolds number, but also the reverse flow resistance at the same time. The chamfer structure with a height of 3 / 4 of the cavity height can reduce the forward flow resistance to the greatest extent, and the effect on the reverse flow resistance is the least, and the effect on the performance of the eddy current diode is the most significant. The results obtained by numerical simulation can provide a reference for the optimal design of eddy current diodes.
【作者單位】： 中國科學(xué)院上海應(yīng)用物理研究所;中國科學(xué)院大學(xué);
【基金】：中國科學(xué)院戰(zhàn)略性先導(dǎo)科技專項(xiàng)(No.XDA02050100) 上海市科研計(jì)劃項(xiàng)目(No.14ZR1448400)資助
【分類號】：TL364
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本文編號：2069915