本文選題：太陽能電池　切入點(diǎn)：Cu_2FeSnS_4　出處：《華東師范大學(xué)》2017年碩士論文

【摘要】：20世紀(jì)以來,隨著不可再生能源的日益減少,可再生能源逐漸成為最具決定性影響的技術(shù)領(lǐng)域。由于太陽能清潔安全、取之不盡、用之不竭,因此對太陽能電池材料的研究引起了科學(xué)家們的廣泛關(guān)注。其中,已商業(yè)化的Cu(In,Ga)(Se,S)2(CIGS)和CdTe吸收層材料雖然具有性能穩(wěn)定、能量轉(zhuǎn)換效率高(超過20%)等優(yōu)點(diǎn),已成為光伏領(lǐng)域的研究熱點(diǎn)之一。但因其元素稀有且有毒,加之生產(chǎn)成本較高,限制了它們的大規(guī)模使用。最近,人們又將目光放在四元硫?qū)倩衔顲u2FeSnS4(CFTS)上,CFTS具有與CIGS相似的晶體結(jié)構(gòu),因其元素含量豐富無毒,且有良好的光電性能、合適的光學(xué)帶隙(1.20 eV-1.50 eV)和較高的吸收系數(shù)(104 cm-10,被認(rèn)為是另一種最具有潛力的太陽能電池吸收層材料。到目前為止,CFTS薄膜太陽能電池的最高轉(zhuǎn)換效率為8.03%,與CIGS薄膜太陽能電池相比,還有相當(dāng)大的提升空間,因此對CFTS薄膜進(jìn)行研究有很好的發(fā)展前景。本文主要采用電化學(xué)沉積法在透明導(dǎo)電FTO襯底上沉積Cu2FeSnS4薄膜前驅(qū)體,然后硫化退火制備CFTS薄膜。通過實驗尋找最佳的沉積CFTS薄膜的條件,并對結(jié)果進(jìn)行分析研究。運(yùn)用恒電位沉積法研究薄膜的制備條件,成功制備出了 CFTS薄膜。采用X射線衍射儀(XRD)、拉曼光譜儀(Raman)、X射線能譜儀(EDS)、X射線光電子能譜(XPS)、能譜儀元素像分析技術(shù)(Mapping)和紫外可見近紅外分光光度計(UV-Vis-NIR Spectrophotometer)對薄膜的結(jié)構(gòu)、元素組成及價態(tài)和光學(xué)性質(zhì)進(jìn)行了分析研究。研究結(jié)果表明:退火時間與退火溫度對CFTS薄膜的生長情況、光學(xué)特性都有很大的影響。在N2氣氛下,退火時間保持在30 min,退火溫度為550℃時,制備出的CFTS薄膜結(jié)晶度最高,并且其禁帶寬度最接近理論值,約為1.48 eV,可推斷出,該方法制備出的CFTS薄膜材料滿足太陽能電池器件制作的要求。其次,采用磁控濺射法在玻璃(SLG)襯底上設(shè)計并制備了 Cu-Fe-Sn金屬層前驅(qū)體,并對其硫化退火形成CFTS薄膜。探究了最佳的沉積順序、濺射條件以及退火條件。采用X射線衍射儀(XRD)、拉曼光譜儀(Raman)研究了薄膜的結(jié)構(gòu)特征,通過掃描電子顯微鏡(SEM)和Mapping觀測了薄膜的表面形貌及元素分布的均勻性,使用X射線光電子能譜(XPS)分析了薄膜中各元素的化學(xué)價態(tài),采用紫外可見近紅外分光光度計(UV-Vis-NIR Spectrophotometer)測量并計算了薄膜的光學(xué)帶隙。研究發(fā)現(xiàn)：不同的濺射順序?qū)Ρ∧び泻艽蟮挠绊憽．?dāng)濺射順序為Fe/Sn/Cu時,所制備薄膜的附著性最佳,不脫落。當(dāng)在550℃條件下退火時,所制備薄膜的結(jié)晶度最高,且表面形貌最平整,各元素分布均勻,禁帶寬度為1.47 eV,符合太陽能電池對吸收層材料帶隙值的要求。
[Abstract]:Since the 20th century, with the decreasing of non-renewable energy, renewable energy has gradually become the most decisive technical field.Because solar energy is clean and safe, it is inexhaustible and inexhaustible, so the research of solar cell materials has attracted wide attention of scientists.Among them, the commercial CdTe and CdTe absorption layer materials have the advantages of stable performance and high energy conversion efficiency (over 20 parts), which have become one of the research hotspots in the field of photovoltaic.However, their rare and toxic elements and high production costs limit their large-scale use.Recently, attention has been paid to the tetrabasic sulfur compound Cu2FeSnS4CFTS, which has a crystal structure similar to that of CIGS, because of its rich element content, non-toxic, and good optoelectronic properties.The suitable optical band gap (1.20 eV-1.50 EV) and high absorption coefficient (104cm-10) are considered as another potential solar cell absorption layer material.So far, the highest conversion efficiency of CFTS thin film solar cells is 8.03. Compared with CIGS thin film solar cells, there is still considerable room for improvement. Therefore, the research on CFTS thin film has a good prospect.In this paper, the precursor of Cu2FeSnS4 thin films was deposited on transparent and conductive FTO substrates by electrochemical deposition, and then CFTS films were prepared by vulcanization annealing.The best conditions for deposition of CFTS thin films were found by experiments, and the results were analyzed and studied.The preparation conditions of CFTS thin films were studied by potentiostatic deposition, and the CFTS thin films were successfully prepared.The composition, valence state and optical properties of the elements were studied.The results show that annealing time and annealing temperature have great influence on the growth and optical properties of CFTS films.In N2 atmosphere, when annealing time is kept at 30 min and annealing temperature is 550 鈩，

本文編號：1726706